公开(公告)号：US10784679B2

公开(公告)日：2020-09-22

申请号：US15687252

申请日：2017-08-25

Applicant: Huawei Technologies Co., Ltd.

Inventor： Mei Li ,  Bingwu Ji ,  Yu Xia

IPC: H02H9/04 ,  H01L27/02

Abstract: This application discloses an electrostatic discharge protection apparatus and an integrated circuit with multiple power domains. The electrostatic discharge protection apparatus includes a diode and an NMOS transistor. A positive electrode of the diode is coupled to a first interface, a negative electrode of the diode is coupled to a first electrode of the NMOS transistor, both a second electrode of the NMOS transistor and a gate electrode of the NMOS transistor are coupled to a second interface, and a substrate of the NMOS transistor is used for grounding. At least one electrostatic discharge protection apparatus may be disposed in the integrated circuit with multiple power domains.

公开(公告)号：US20180062387A1

公开(公告)日：2018-03-01

申请号：US15687252

申请日：2017-08-25

Applicant: Huawei Technologies Co., Ltd.

Inventor： Mei Li ,  Bingwu Ji ,  Yu Xia

IPC: H02H9/04 ,  H01L27/02

CPC classification number: H02H9/046 ,  H01L27/0255 ,  H01L27/0266 ,  H01L27/0292

Abstract: This application discloses an electrostatic discharge protection apparatus and an integrated circuit with multiple power domains. The electrostatic discharge protection apparatus includes a diode and an NMOS transistor. A positive electrode of the diode is coupled to a first interface, a negative electrode of the diode is coupled to a first electrode of the NMOS transistor, both a second electrode of the NMOS transistor and a gate electrode of the NMOS transistor are coupled to a second interface, and a substrate of the NMOS transistor is used for grounding. At least one electrostatic discharge protection apparatus may be disposed in the integrated circuit with multiple power domains.