公开(公告)号：US6130167A

公开(公告)日：2000-10-10

申请号：US270593

申请日：1999-03-18

申请人： Hun-Jan Tao ,  Shu-Chin Yang ,  Chao-Cheng Chen

发明人： Hun-Jan Tao ,  Shu-Chin Yang ,  Chao-Cheng Chen

IPC分类号： H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/308

CPC分类号： H01L21/02071 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76814 ,  H01L21/76888 ,  H01L21/31116

摘要： A process used to prevent attack of an aluminum based structure, exposed in a non-fully landed via hole, from solvents used during the wet stripping cycle, performed to remove the via hole defining photoresist shape, has been developed. The process features the formation of a protective aluminum oxide layer, on the exposed side of the aluminum based structure, via use of a plasma treatment, performed in an H.sub.2 O/N.sub.2 ambient. The H.sub.2 O/N.sub.2 plasma treatment procedure is performed after a dry plasma, photoresist stripping step, but prior to a final wet photoresist stripping step. The aluminum oxide layer offers protection of the exposed regions of the aluminum structure, located in the non-fully landed via hole, from reaction or corrosion, that can result from exposure of aluminum to the solvents used in the final wet photoresist stripping cycle.

摘要翻译： 已经开发了一种用于防止暴露在非完全着陆的通孔中的铝基结构从在湿式剥离循环期间使用的溶剂的侵蚀的过程，以去除限定光致抗蚀剂形状的通孔。 该方法的特征在于在基于铝的结构的暴露侧上通过使用在H 2 O / N 2环境中进行的等离子体处理形成保护性氧化铝层。 H 2 O / N 2等离子体处理程序在干等离子体，光致抗蚀剂剥离步骤之后，但在最后的湿光致抗蚀剂剥离步骤之前进行。 氧化铝层提供保护位于非完全着陆的通孔中的铝结构的暴露区域不受反应或腐蚀的影响，这可能是由于将铝暴露于最终湿光致抗蚀剂剥离循环中使用的溶剂而导致的。