公开(公告)号：US06655042B2

公开(公告)日：2003-12-02

申请号：US10060021

申请日：2002-01-29

申请人： Hun-jung Yi ,  Ki-seok Lee ,  Bo-yong Lee ,  Sang-oh Park ,  Pil-kwon Jun ,  Sang-mun Chon ,  Kyung-dae Kim

发明人： Hun-jung Yi ,  Ki-seok Lee ,  Bo-yong Lee ,  Sang-oh Park ,  Pil-kwon Jun ,  Sang-mun Chon ,  Kyung-dae Kim

IPC分类号： F26B300

CPC分类号： H01L21/67034

摘要： A drying system for drying a semiconductor substrate is provided. The drying system includes: a chamber for housing a vapor distributor and a fluid bath, said fluid bath being disposed in a lower portion of the chamber and said distributor being disposed in an upper portion of the chamber for distributing vapor for drying the substrate; and a fluid flow system for supplying fluid flow into said fluid bath for cleaning and drying the substrate and for draining said fluid from the fluid bath, wherein the chamber includes a plurality of exhaust vents disposed at the upper portion for venting the vapor.

摘要翻译： 提供了用于干燥半导体衬底的干燥系统。 所述干燥系统包括：用于容纳蒸汽分配器和流体浴的室，所述流体浴设置在所述室的下部，所述分配器设置在所述室的上部，用于分配用于干燥所述基板的蒸气; 以及流体流动系统，用于将流体流供应到所述流体浴中，以清洁和干燥所述基底并从所述流体浴排出所述流体，其中所述腔室包括设置在所述上​​部的多个排气口，用于排出蒸气。

公开(公告)号：US20090117499A1

公开(公告)日：2009-05-07

申请号：US12232594

申请日：2008-09-19

申请人： Se-yeon Kim ,  Yong-kyun Ko ,  Sang-mi Lee ,  Yang-koo Lee ,  Hun-jung Yi ,  Kun-tack Lee

发明人： Se-yeon Kim ,  Yong-kyun Ko ,  Sang-mi Lee ,  Yang-koo Lee ,  Hun-jung Yi ,  Kun-tack Lee

IPC分类号： G03F7/20 ,  C11D3/20

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： A cleaning solution for an immersion photolithography system according to example embodiments may include an ether-based solvent, an alcohol-based solvent, and a semi-aqueous-based solvent. In the immersion photolithography system, a plurality of wafers coated with photoresist films may be exposed pursuant to an immersion photolithography process using an immersion fluid. The area contacted by the immersion fluid during the exposure process may accumulate contaminants. Accordingly, the area contacted by the immersion fluid during the exposure process may be washed with the cleaning solution according to example embodiments so as to reduce or prevent defects in the immersion photolithography system.

摘要翻译： 根据示例性实施方式的用于浸没式光刻系统的清洁溶液可以包括醚类溶剂，醇类溶剂和半水性溶剂。 在浸没式光刻系统中，可以使用浸没流体根据浸没光刻工艺来曝光涂覆有光致抗蚀剂膜的多个晶片。 在曝光过程中浸入液接触的区域可能会积聚污染物。 因此，可以利用根据示例性实施例的清洗溶液洗涤曝光过程中浸入液接触的区域，以便减少或防止浸没光刻系统中的缺陷。

公开(公告)号：US20070102023A1

公开(公告)日：2007-05-10

申请号：US11594755

申请日：2006-11-09

申请人： Hun-jung Yi ,  Byung-kwang Byun ,  Gyung-soo Kim ,  Jai-young Woo ,  Dong-won Hwang ,  Seung-ki Chae ,  Yang-koo Lee ,  Sang-hee Kim ,  Young-hwan Park

发明人： Hun-jung Yi ,  Byung-kwang Byun ,  Gyung-soo Kim ,  Jai-young Woo ,  Dong-won Hwang ,  Seung-ki Chae ,  Yang-koo Lee ,  Sang-hee Kim ,  Young-hwan Park

IPC分类号： B08B7/04 ,  B08B3/00

CPC分类号： B08B3/14 ,  B08B3/04 ,  B08B3/08 ,  H01L21/02041 ,  H01L21/67086

摘要： An apparatus and method for removing silicate from a phosphoric acid solution, including a treating unit, a regeneration line coupled to the treating unit, an additive solution supply member in communication with the regeneration line to decrease the temperature of the phosphoric acid solution and the concentration of the phosphoric acid therein, a filter in communication with the regeneration line to remove precipitated silicate particles, and a heating member having a heater and a vaporizing chamber to remove the additive.

摘要翻译： 一种从磷酸溶液中除去硅酸盐的装置和方法，包括处理单元，与处理单元相连的再生线，与再生线连通的添加剂溶液供应构件，以降低磷酸溶液的温度和浓度 的磷酸，与再生线连通以除去沉淀的硅酸盐颗粒的过滤器，以及具有加热器和蒸发室以除去添加剂的加热构件。