摘要:
A sputtering apparatus includes a substrate, a sputtering target disposed to face the substrate and formed of a sputtering material to be deposited on the substrate, wherein the sputtering target collides with an ionized gas particle and the sputtering material is separated from the sputtering target by the collision of the ionized gas particle with the sputtering target is deposited on the substrate, a supporter that supports a lower surface and a side surface of the sputtering target, and an insulating cover that covers an upper surface of the supporter supporting the side surface of the sputtering target. The insulating cover includes a plurality of recesses recessed downwardly from an upper surface of the insulating cover and a plurality of protrusions protruding upwardly between the recesses.
摘要:
An air purifying apparatus includes an air flow generating device for generating a flow of air, a nozzle spraying water to the air flowing through the air flow generating device, a plasma module performing a plasma reaction on the air containing the water sprayed from the nozzle, and oxidizing NOx in the air and converting it into NO3, an eliminator eliminating the NO3 converted in the plasma module and the water contained in the air and passing pure air through the eliminator and out of the air purifying apparatus and a water tank storing the water received from the eliminator, thereby heightening the removal efficiency of NOx from the air.
摘要:
An air purifying apparatus includes an air flow generating device for generating a flow of air, a nozzle spraying water to the air flowing through the air flow generating device, a plasma module performing a plasma reaction on the air containing the water sprayed from the nozzle, and oxidizing NOx in the air and converting it into NO3, an eliminator eliminating the NO3 converted in the plasma module and the water contained in the air and passing pure air through the eliminator and out of the air purifying apparatus and a water tank storing the water received from the eliminator, thereby heightening the removal efficiency of NOx from the air.
摘要:
A method an apparatus for drying a wafer, and an apparatus for cleaning and drying a wafer are provided. In the apparatus for cleaning and drying a wafer, the wafer is dipped into a cleaning solution in a cleaning tank. The wafer is then dried using a drying gas in a drying chamber disposed over the cleaning tank. A shutter separates the cleaning tank from the drying tank. A wafer boat moves the wafer vertically between the cleaning tank and the drying tank. Nozzles for providing the cleaning solution onto the wafer are disposed at both inner sides of the drying tank. The nozzles are connected to a drying gas supply unit to alternately and periodically provide the drying gas onto the wafer.
摘要:
An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.
摘要:
A cleaning apparatus is provided comprising a process chamber defining a work space, a supporter apparatus for rotating a wafer, the supporter apparatus being located in the work space and the wafer being mounted on the supporter apparatus such that a processing surface of the wafer is upwardly facing, an organic solvent supplying nozzle for supplying an organic solvent into the work space to the processing surface of the wafer mounted on the supporter apparatus, and a dry gas supplying nozzle for supplying an organic solvent vapor into the work space and forming an organic solvent atmosphere therein. Thus, water remaining on the wafer may be readily removed.
摘要:
An apparatus for cleaning semiconductor substrates includes a chamber having a cleaning room and a drying room disposed over the cleaning room. The cleaning room and the drying room are separated or placed in communication with one another by a separation plate. An exhaust path is formed at a central portion of the separation plate. As de-ionized water (DI water) filling the cleaning room is drained during a dry process, the inside of the drying room is decompressed, and a drying fluid in the drying room flows from the drying room to the cleaning room along the exhaust path.
摘要:
A cleaning method for cleaning a semiconductor manufacturing apparatus may include generating plasma from a cleaning gas. The semiconductor manufacturing apparatus may be cleaned with the plasma. A positive direct-current voltage may be applied to an ESC of the semiconductor manufacturing apparatus during a cleaning of the semiconductor manufacturing apparatus. A negative direct-current voltage may be applied to the ESC during the cleaning of the semiconductor manufacturing apparatus. Also, a wall of the process chamber may be cleaned by applying the positive direct-current voltage to the ESC.
摘要:
A photolithography process may be carried out after cleaning the backside of a wafer by means of an apparatus that includes an illumination module for conducting an optical illumination operation of photolithography to the front side of the wafer, and a cleaning module for conducting a cleaning operation on the wafer backside. Providing the capability of removing particles from the wafer backside and eliminating defocusing effects due to wafer chucking errors, these and other embodiments improve reliability of the photolithography process, as well as productivity and yields for the semiconductor devices.
摘要:
A drying apparatus and method of drying a wafer including supplying a drying material for drying a wafer and controlling a flow of the drying material to uniformly or substantially uniformly dry the wafer. The flow of the drying material may be controlled by a vent unit including at least one part for controlling the flow of the drying material to uniformly or substantially uniformly dry the wafer.