Amine Oxides for Etching, Stripping and Cleaning Applications

    公开(公告)号:US20230266671A1

    公开(公告)日:2023-08-24

    申请号:US18020313

    申请日:2021-08-16

    IPC分类号: G03F7/42

    CPC分类号: G03F7/425

    摘要: The present disclosure is directed to a method of cleaning a microelectronic substrate, such as a semiconductor device, by contacting the microelectronic substrate with an amine oxide selected from the group consisting of N,N-dimethylethanolamine N-oxide, triethanolamine N-oxide, ethanamine, 2,2′-oxybis[N,N-dimethyl-,N,N′-dioxide], 1-methylpyrrolidine N-oxide, N,N-dimethylcyclohexylamine N-oxide, and a mixture thereof for a time and at a temperature sufficient to clean the substrate.