摘要:
Disclosed herein are an apparatus and method for correcting an error in a stereoscopic image. The apparatus includes two cameras, a region extraction unit, a phase difference calculation unit, an error value extraction unit, and an error analysis unit. The cameras capture left and right images forming the stereoscopic image. The region extraction unit extracts the main regions of interest from each of the images. The phase difference calculation unit calculates the difference in phase between the main regions of interest of the left image and the main regions of interest of the right image. The error value extraction unit extracts the value of a camera disposition error, corresponding to locations of the two cameras, based on the difference in phase. The error analysis unit determines whether the value of the camera disposition error is within a set range, and corrects the error in the stereoscopic image.
摘要:
A rendering system includes a data input unit for reading depth information of a deep render buffer obtained by rendering; a camera lens sampling unit for sampling surface data of a lens provided in a camera; a deep render buffer reconstruction unit referring to pixel location information of the deep render buffer to reconstruct a deep render buffer at a new camera position, wherein the camera position corresponds to a sampling result from the camera lens sampling unit. The rendering system further includes a render image generation unit for generating a render image at the camera position from the reconstructed deep render buffer; and an image accumulation unit for accumulating the render image at the camera position.
摘要:
A highly reliable semiconductor device and a method fabricating the same are provided, the semiconductor device having a low resistance electrode structure. The semiconductor device includes an interlayer insulation film formed on a semiconductor substrate. A storage node electrode is formed on the interlayer insulation film. A protection film is formed on the storage node electrode and includes a nitrided metal film. A dielectric film overlies the protection film. A plate electrode is formed on the dielectric film.