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    THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME
    5.
    发明申请
    THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权
    薄膜晶体管，其制造方法和具有该薄膜晶体管的平板显示器件

    公开(公告)号：US20110193083A1

    公开(公告)日：2011-08-11

    申请号：US13091614

    申请日：2011-04-21

    申请人： Min-Kyu KIM ,  Jong-Han JEONG ,  Tae-Kyung AHN ,  Jae-Kyeong JEONG ,  Yeon-Gon MO ,  Jin-Seong PARK ,  Hyun-Joong CHUNG ,  Kwang-Suk KIM ,  Hui-Won YANG

    发明人： Min-Kyu KIM ,  Jong-Han JEONG ,  Tae-Kyung AHN ,  Jae-Kyeong JEONG ,  Yeon-Gon MO ,  Jin-Seong PARK ,  Hyun-Joong CHUNG ,  Kwang-Suk KIM ,  Hui-Won YANG

    IPC分类号： H01L29/786 ,  H01L21/44

    CPC分类号： H01L29/7869 ,  H01L29/78606

    摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

    摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止了电荷俘获。

    THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME
    6.
    发明申请
    THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 有权
    薄膜晶体管，其制造方法以及具有该薄膜晶体管的平板显示器件

    公开(公告)号：US20100181563A1

    公开(公告)日：2010-07-22

    申请号：US12690149

    申请日：2010-01-20

    申请人： Min-Kyu KIM ,  Jin-Seong PARK ,  Tae-Kyung AHN ,  Hyun-Joong CHUNG

    发明人： Min-Kyu KIM ,  Jin-Seong PARK ,  Tae-Kyung AHN ,  Hyun-Joong CHUNG

    IPC分类号： H01L29/227 ,  H01L51/52 ,  H01L21/34

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262

    摘要： A thin film transistor using an oxide semiconductor as an active layer, and its method of manufacture. The thin film transistor includes: a substrate; an active layer formed of an oxide semiconductor; a gate insulating layer formed of a dielectric on the active layer, the dielectric having an etching selectivity of 20 to 100:1 with respect to the oxide semiconductor; a gate electrode formed on the gate insulating layer; an insulating layer formed on the substrate including the gate electrode and having contact holes to expose the active layer; and source and drain electrodes connected to the active layer through the contact holes. Since the source and drain electrodes are not overlapped with the gate electrode, parasitic capacitance between the source and drain electrodes and the gate electrode is minimized. Since the gate insulating layer is formed of dielectric having a high etching selectivity with respect to oxide semiconductor, the active layer is not deteriorated.

    摘要翻译： 使用氧化物半导体作为活性层的薄膜晶体管及其制造方法。 薄膜晶体管包括：基板; 由氧化物半导体形成的有源层; 由有源层上的电介质形成的栅极绝缘层，所述电介质具有相对于所述氧化物半导体为20〜100:1的蚀刻选择性; 形成在所述栅极绝缘层上的栅电极; 绝缘层，形成在包括所述栅电极的所述基板上，并具有露出所述有源层的接触孔; 并且源极和漏极通过接触孔连接到有源层。 由于源极和漏极不与栅电极重叠，所以源电极和漏极之间的寄生电容和栅电极最小化。 由于栅极绝缘层由相对于氧化物半导体具有高蚀刻选择性的电介质形成，所以有源层不会劣化。