公开(公告)号：US20130128660A1

公开(公告)日：2013-05-23

申请号：US13475204

申请日：2012-05-18

申请人： Hyun-Seung YOO ,  Sung-Joo HONG ,  Seiichi ARITOME ,  Seok-Kiu LEE ,  Sung-Kye PARK ,  Gyu-Seog CHO ,  Eun-Seok CHOI ,  Han-Soo JOO

发明人： Hyun-Seung YOO ,  Sung-Joo HONG ,  Seiichi ARITOME ,  Seok-Kiu LEE ,  Sung-Kye PARK ,  Gyu-Seog CHO ,  Eun-Seok CHOI ,  Han-Soo JOO

IPC分类号： G11C16/04 ,  G11C16/26

CPC分类号： G11C16/0483 ,  G11C16/26 ,  G11C16/3418

摘要： A reading method of a non-volatile memory device that includes a plurality memory cells that each include one floating gate and two control gates disposed adjacent to the floating gate on two alternate sides of the floating gate, respectively, and two adjacent memory cells share one control gate, the reading method comprising applying a read voltage to control gates of a selected memory cell, applying a second pass voltage to alternate control gates of the memory cells different from the control gates of the selected memory cells starting from the control gates next to the selected memory cell, and applying a first pass voltage that is lower than the second pass voltage to alternate the control gates of the memory cells different from the control gates of the selected memory cells starting from the control gates secondly next to the selected memory cell.

摘要翻译： 一种非易失性存储器件的读取方法，包括分别包括一个浮动栅极和两个控制栅极的多个存储器单元，两个控制栅极分别与浮置栅极的两个交替侧相邻设置，并且两个相邻的存储单元共享一个 所述读取方法包括将读取电压施加到所选择的存储器单元的控制栅极，将第二通过电压施加到与所选择的存储器单元的控制栅极不同的存储单元的控制栅极的替代控制栅极，所述存储器单元从控制栅极开始， 所选择的存储单元，以及施加低于第二通过电压的第一通过电压，以从控制栅极开始的第二选择的存储单元开始，将不同于所选存储单元的控制栅极的存储单元的控制栅极交替 。