公开(公告)号：US07054204B2

公开(公告)日：2006-05-30

申请号：US10828454

申请日：2004-04-20

Applicant: Jong-hyoung Lim ,  Hyuk-joon Kwon ,  Hyun-kyu Lee

Inventor： Jong-hyoung Lim ,  Hyuk-joon Kwon ,  Hyun-kyu Lee

IPC: G11C7/00 ,  G11C8/00

CPC classification number: G11C11/4076 ,  G11C11/4096 ,  G11C2207/002 ,  G11C2207/229

Abstract: Disclosed herein are a semiconductor method and device which are capable of reducing data write errors by rewriting last write data during a write recovery time (tWR). The semiconductor device comprises a memory cell array consisting of a plurality of repetitive cell units; a bit line amplifier for amplifying a voltage difference between a bit line voltage and a complementary bit line voltage of the memory cell array; switching devices activated by a column selection line signal for electrically connecting a data line and a complementary data line to the bit line and the complementary bit line, respectively; and a write driver for supplying a write data voltage to the data line and the complementary data line, wherein the column selection line signal is generated during a write recovery time. The method for controlling the semiconductor device including a memory cell array having a plurality of repetitive cell units, a bit line amplifier for amplifying a voltage difference between a bit line voltage and a complementary bit line voltage of the memory cell array, switching devices activated by a column selection line signal for electrically connecting a data line and a complementary data line to the bit line and the complementary bit line, respectively, and a write driver for supplying a write data voltage to the data line and the complementary data line, comprises the steps of: writing data voltage into the memory cell array; and generating the column selection line signal during a write recovery time.

Abstract translation: 这里公开了一种半导体方法和装置，其能够通过在写入恢复时间（tWR）期间重写最后写入数据来减少数据写入错误。 半导体器件包括由多个重复单元单元组成的存储单元阵列; 位线放大器，用于放大存储单元阵列的位线电压和互补位线电压之间的电压差; 由列选择线信号激活的开关装置，用于将数据线和互补数据线分别电连接到位线和互补位线; 以及用于向数据线和互补数据线提供写数据电压的写驱动器，其中在写恢复时间期间产生列选择线信号。 用于控制包括具有多个重复单元单元的存储单元阵列的半导体器件的方法，用于放大位线电压和存储单元阵列的互补位线电压之间的电压差的位线放大器，由 用于将数据线和互补数据线分别电连接到位线和互补位线的列选择线信号和用于向数据线和互补数据线提供写数据电压的写驱动器，包括： 步骤：将数据电压写入存储单元阵列; 以及在写恢复时间期间产生列选择线信号。

公开(公告)号：US20070139225A1

公开(公告)日：2007-06-21

申请号：US11541532

申请日：2006-10-03

Applicant: Hyun-kyu Lee

Inventor： Hyun-kyu Lee

IPC: H03M11/00

CPC classification number: H03M11/16 ,  G06F1/1626 ,  G06F1/1662 ,  G06F3/0233 ,  G06F3/0236 ,  G09G2370/24 ,  H03M11/24

Abstract: A key input apparatus and method includes a first key input unit, when any one of a plurality of keys of a first group is pressed, to output first data corresponding to the pressed key, a second key input unit, when any one of a plurality of keys of a second group is pressed, to output second data corresponding to the pressed key, and a key code generator to assign the first data and the second data to a certain row number and a certain column number, respectively, of a matrix and to generate a different key code corresponding to the row number and the column number of the matrix according to an order in which the first data and the second data are output, wherein the keys of the first group are different from the keys of the second group.

Abstract translation: 键输入装置和方法包括：第一键输入单元，当按下第一组的多个键中的任一个时，输出与按下的键对应的第一数据，第二键输入单元，当多个键 按下第二组的键，输出与按下的键对应的第二数据，以及键码发生器，将第一数据和第二数据分别分配给矩阵的一定行号和某列列号， 根据输出第一数据和第二数据的顺序来生成与矩阵的行号和列号相对应的不同的键码，其中第一组的键不同于第二组的键 。

公开(公告)号：US20050030798A1

公开(公告)日：2005-02-10

申请号：US10828454

申请日：2004-04-20

Applicant: Jong-hyoung Lim ,  Hyuk-joon Kwon ,  Hyun-kyu Lee

Inventor： Jong-hyoung Lim ,  Hyuk-joon Kwon ,  Hyun-kyu Lee

IPC: G11C11/40 ,  G11C11/4076 ,  G11C11/4096 ,  G11C7/00

CPC classification number: G11C11/4076 ,  G11C11/4096 ,  G11C2207/002 ,  G11C2207/229

Abstract: Disclosed herein are a semiconductor method and device which are capable of reducing data write errors by rewriting last write data during a write recovery time (tWR). The semiconductor device comprises a memory cell array consisting of a plurality of repetitive cell units; a bit line amplifier for amplifying a voltage difference between a bit line voltage and a complementary bit line voltage of the memory cell array; switching devices activated by a column selection line signal for electrically connecting a data line and a complementary data line to the bit line and the complementary bit line, respectively; and a write driver for supplying a write data voltage to the data line and the complementary data line, wherein the column selection line signal is generated during a write recovery time. The method for controlling the semiconductor device including a memory cell array having a plurality of repetitive cell units, a bit line amplifier for amplifying a voltage difference between a bit line voltage and a complementary bit line voltage of the memory cell array, switching devices activated by a column selection line signal for electrically connecting a data line and a complementary data line to the bit line and the complementary bit line, respectively, and a write driver for supplying a write data voltage to the data line and the complementary data line, comprises the steps of: writing data voltage into the memory cell array; and generating the column selection line signal during a write recovery time.

Abstract translation: 这里公开了一种半导体方法和装置，其能够通过在写入恢复时间（tWR）期间重写最后写入数据来减少数据写入错误。 半导体器件包括由多个重复单元单元组成的存储单元阵列; 位线放大器，用于放大存储单元阵列的位线电压和互补位线电压之间的电压差; 由列选择线信号激活的开关装置，用于将数据线和互补数据线分别电连接到位线和互补位线; 以及用于向数据线和互补数据线提供写数据电压的写驱动器，其中在写恢复时间期间产生列选择线信号。 用于控制包括具有多个重复单元单元的存储单元阵列的半导体器件的方法，用于放大位线电压和存储单元阵列的互补位线电压之间的电压差的位线放大器，由 用于将数据线和互补数据线分别电连接到位线和互补位线的列选择线信号和用于向数据线和互补数据线提供写数据电压的写驱动器，包括： 步骤：将数据电压写入存储单元阵列; 以及在写恢复时间期间产生列选择线信号。