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公开(公告)号:US20240186217A1
公开(公告)日:2024-06-06
申请号:US18144691
申请日:2023-05-08
发明人: Suk Hyun LIM , Jun Hee PARK
IPC分类号: H01L23/427 , H01L25/07
CPC分类号: H01L23/427 , H01L25/072 , H01L23/49833
摘要: A power module include at least one substrate including an insulating layer and a metal circuit disposed on a first side of the insulating layer, a semiconductor chip, and at least one vapor chamber including a fluid flowing therein and disposed between the semiconductor chip and one of the at least one substrate, wherein each of the at least one vapor chamber includes a first side thereof including a plane area greater than or equal to a plane area of the semiconductor chip and connected to the metal circuit of the one of the at least one substrate, and a second side thereof facing the first side along a first direction and connected to the semiconductor chip.
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公开(公告)号:US20240145371A1
公开(公告)日:2024-05-02
申请号:US18134684
申请日:2023-04-14
发明人: So Eun JEONG , Suk Hyun LIM
IPC分类号: H01L23/498 , H01L23/00 , H01L23/46
CPC分类号: H01L23/49838 , H01L23/46 , H01L23/49833 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/92 , H01L25/072
摘要: A power module and a method of manufacturing the same, includes at least one insulating substrate; and at least one semiconductor chip included on the at least one insulating substrate, the at least one insulating substrate including: an insulating layer; and a metal layer disposed between the at least one semiconductor chip and the insulating layer, forming electrical connection with the at least one semiconductor chip through a circuit pattern, and allowing a fluid filled in a sealed cavity formed in the metal layer to flow.
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公开(公告)号:US20240071858A1
公开(公告)日:2024-02-29
申请号:US17985693
申请日:2022-11-11
发明人: Tae Hwa KIM , Suk Hyun LIM , Nam Sik KONG
IPC分类号: H01L23/367 , H01L23/373 , H01L23/40 , H01L23/495
CPC分类号: H01L23/3675 , H01L23/3735 , H01L23/40 , H01L23/495
摘要: A vehicle power module includes an upper substrate and a lower substrate spaced from each other in a vertical direction, a semiconductor chip connected to one of the upper substrate and the lower substrate, and a spacer formed of a metal material containing copper and connecting the semiconductor chip to the other of the upper substrate and the lower substrate or to connect the upper substrate to the lower substrate, the spacer including a plurality of penetration portions formed to penetrate an inside thereof.
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公开(公告)号:US20230360996A1
公开(公告)日:2023-11-09
申请号:US17971907
申请日:2022-10-24
发明人: Suk Hyun LIM , Tae Hwa KIM
IPC分类号: H01L23/373 , H01L23/46 , H01L23/31
CPC分类号: H01L23/3733 , H01L23/3736 , H01L23/46 , H01L23/31 , H01L23/3735
摘要: A direct cooling type power module comprising, an enclosure filled with an insulating fluid, a power semiconductor device disposed inside the enclosure and a bonding unit comprising a porous layer, and a thermally conductive layer to which the power semiconductor device is bonded, and allowing the power semiconductor device to exchange heat with the insulating fluid by the porous layer and the thermally conductive layer.
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