公开(公告)号：US06613621B2

公开(公告)日：2003-09-02

申请号：US09803244

申请日：2001-03-09

申请人： Hyung-Soo Uh ,  Kyu-Hynn Lee ,  Tae-Young Chung ,  Ki-Nam Kim ,  Yoo-Sang Hwang

发明人： Hyung-Soo Uh ,  Kyu-Hynn Lee ,  Tae-Young Chung ,  Ki-Nam Kim ,  Yoo-Sang Hwang

IPC分类号： H01L21338

CPC分类号： H01L21/76897 ,  H01L21/76895 ,  H01L21/823437 ,  H01L21/823456 ,  H01L29/41783 ,  H01L29/66537 ,  H01L29/66545

摘要： Self-aligned contacts in integrated circuits can be formed on an integrated circuit substrate having an active region. A groove can be formed in the insulating layer and a conductive material can be formed in the groove to a level that is recessed in the groove. An insulating material can be formed in the groove on the conductive material that has an etch selectivity with respect to the insulating layer. A contact that is self-aligned to the active region can be then be formed.

摘要翻译： 集成电路中的自对准触点可以形成在具有有源区的集成电路基板上。 可以在绝缘层中形成沟槽，并且可以在沟槽中形成导电材料到凹陷在凹槽中的水平。 绝缘材料可以形成在导电材料上的相对于绝缘层具有蚀刻选择性的凹槽中。 然后可以形成与活性区域自对准的接触。