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1.发明申请Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof 有权具有与其表面正交的氧化锌纳米线阵列的基板及其制造方法公开(公告)号：US20050223969A1
公开(公告)日：2005-10-13
申请号：US10822648
申请日：2004-04-13
申请人： I-Cherng Chen , Yung-Kuan Tseng , Chor-Jye Huang
发明人： I-Cherng Chen , Yung-Kuan Tseng , Chor-Jye Huang
摘要： A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to the surface of the substrate. The crystal phase adjusting buffer includes, for example, nitride and oxide layers on a silicon substrate, or a gallium nitride epitaxial layer on a sapphire substrate, and is used as a growth buffer layer for the zinc oxide nanowires. The zinc vapor phase deposition includes forming a zinc oxide layer on the crystal phase adjusting buffer and forming vertical zinc oxide nanowires on the zinc oxide layer.
摘要翻译： 公开了一种在衬底上形成氧化锌纳米线阵列的方法，其包括在衬底的表面上形成结晶相调节缓冲液，并通过锌蒸气沉积在缓冲液上生长一维氧化锌纳米线，这是垂直于表面 的基底。 晶体相位调整缓冲器例如包括硅衬底上的氮化物层和氧化物层，或蓝宝石衬底上的氮化镓外延层，并用作氧化锌纳米线的生长缓冲层。 锌蒸气相沉积包括在结晶相调节缓冲液上形成氧化锌层，并在氧化锌层上形成垂直的氧化锌纳米线。
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2.发明授权Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof 有权具有与其表面正交的氧化锌纳米线阵列的基板及其制造方法公开(公告)号：US07235129B2
公开(公告)日：2007-06-26
申请号：US10822648
申请日：2004-04-13
申请人： I-Cherng Chen , Yung-Kuan Tseng , Chor-Jye Huang
发明人： I-Cherng Chen , Yung-Kuan Tseng , Chor-Jye Huang
IPC分类号： C30B21/04
摘要： A method for forming an array of zinc oxide nanowires on a substrate is disclosed, which includes forming a crystal phase adjusting buffer on the surface of the substrate and growing 1D zinc oxide nanowires on the buffer by zinc vapor deposition, which are normal to the surface of the substrate. The crystal phase adjusting buffer includes, for example, nitride and oxide layers on a silicon substrate, or a gallium nitride epitaxial layer on a sapphire substrate, and is used as a growth buffer layer for the zinc oxide nanowires. The zinc vapor phase deposition includes forming a zinc oxide layer on the crystal phase adjusting buffer and forming vertical zinc oxide nanowires on the zinc oxide layer.
摘要翻译： 公开了一种在衬底上形成氧化锌纳米线阵列的方法，其包括在衬底的表面上形成结晶相调节缓冲液，并通过锌蒸气沉积在缓冲液上生长一维氧化锌纳米线，这是垂直于表面 的基底。 晶体相位调整缓冲器例如包括硅衬底上的氮化物层和氧化物层，或蓝宝石衬底上的氮化镓外延层，并用作氧化锌纳米线的生长缓冲层。 锌蒸气相沉积包括在结晶相调节缓冲液上形成氧化锌层，并在氧化锌层上形成垂直的氧化锌纳米线。
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