公开(公告)号：US3619283A

公开(公告)日：1971-11-09

申请号：US3619283D

申请日：1968-09-27

Applicant: IBM

Inventor： CARPENTER DONALD R ,  MANLEY GERALD W ,  MCDERMOTT PHILIP S ,  RILEY RALPH J

IPC: C30B23/02 ,  C23C14/06 ,  C30B25/02 ,  C30B29/48 ,  H01L21/365 ,  C23C13/08 ,  B05C11/14 ,  C23C13/00

CPC classification number: C23C14/0629 ,  Y10S117/907 ,  Y10S148/017 ,  Y10S148/064 ,  Y10S252/951 ,  Y10S438/935 ,  Y10S438/971

Abstract: A monocrystalline material of the formulation Hg(1 x)Cd(x)Te is grown epitaxially on a seed or substrate monocrystal of Cd Te, or the like. The reactants are mixed in the vapor phase and held at a temperature which prevents binary combinations. The ternary vapor phase mixture is then rapidly cooled to supersaturation and condensed on the seed crystal substrate. In a dynamic system, the mercury vapor acts as a carrier gas as well as a reactant.