公开(公告)号：US3649393A

公开(公告)日：1972-03-14

申请号：US3649393D

申请日：1970-06-12

Applicant: IBM

Inventor： HATZAKIS MICHAEL

IPC: H01L21/00 ,  H01L21/263 ,  H01L49/02 ,  C23F1/00

CPC classification number: H01L21/263 ,  H01L21/00 ,  H01L49/02 ,  Y10S438/949

Abstract: A METHOD OF ETCHING FILM MATERIAL SUCH AS A THIN FILM LAYER WHERE THE THICKNESS OF THE THIN FILM IS NOT UNIFORM. THE THIN FILM LAYER, WHICH MAY CONSIST OF AN OXIDE, A METAL OR THE LIKE, IS NORMALLY SUPPORTED ON A SUBSTRATE. THE THIN FILM LAYER HAS MARKEDLY DIFFERENT THICKNESS IN DIFFERENT AREAS TO BE ETCHED. THE PHOTORESIST COATED THIN FILM IS EXPOSED BY AN ELECTRON BEAM IN A SERIES OF SEPARATE EXPOUSRES WITH DIFFERENT EXPOSURE DENSITIES. THE THICKEST AREA IS EXPOSED FIRST WITH THE HIGHEST EXPOSURE DENSITY. SUBSEQUENT EXPOSURES ARE MADE IN THE OTHER DESIRED AREAS WITH DECREASING DENSITIES IN ACCORDANCE WITH DECRASING THICKNESS. IN THE DEVELOPMENT STEPS, THE PHOTORESIST IS DEVELOPED UNTIL THE AREA OF HIGHEST EXPOSED DENSITY IS OPENED AND THE THIN FILM IS ETCHED TO THE NEXT THICKNESS LEVEL. DEVELOPMENT IS CONTINUED UNTIL THE SECOND HIGHEST EXPOSED DENSITY IS OPENED AND THEN THE THIN FILM IS ETCHED TO THE NEXT THIN FILM LEVEL AND SO ON.

公开(公告)号：US3535137A

公开(公告)日：1970-10-20

申请号：US3535137D

申请日：1967-01-13

Applicant: IBM

Inventor： HALLER IVAN ,  HATZAKIS MICHAEL ,  SRINIVASAN RANGASWAMY

IPC: G03F7/039 ,  H01L21/00 ,  H01L23/29 ,  B44D1/50

CPC classification number: H01L21/00 ,  G03F7/039 ,  H01L23/293 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：US3519788A

公开(公告)日：1970-07-07

申请号：US3519788D

申请日：1967-01-13

Applicant: IBM

Inventor： HATZAKIS MICHAEL

IPC: B23K15/02 ,  H01J37/304 ,  H01L21/00 ,  B23K15/00

CPC classification number: H01J37/3045 ,  B23K15/02 ,  H01L21/00