Abstract:
A decoder for cylindrical magnetic domain shift registers having means to clear the information from selected registers thus enabling new information to be written into those registers. The decoder is incorporated into 2N closed loop shift registers and uses only a small part of the storage area of the magnetic sheet in which domains exist. It is activated by 2N control lines (N pairs). Depending upon the activation of the decoder, the information in a selected shift register is passed to a clear means which sends it into one of two paths depending upon the activation of the clear means. One path brings the information to a detector for destructive readout, while the other path brings the information to a domain splitter. The domain splitter splits the input domains into two parts, one of which propagates to the detector while the other returns to the proper shift register. Thus, non-destructive readout (NDRO) or destructive read-out (DRO) is provided depending upon the activation of the clear means.
Abstract:
Gapless, double-sided propagation structures are provided for implementing the continuous movement of magnetic bubble domains under the control of a reorienting in-plane field. Propagation is achieved by using two identical disc circuits on both sides of the bubble material displaced from each other by one-half of periodicity. The discs in each circuit are disposed in tangential engagement with each other and the two circuits may follow any desired path provided the circuits are in alignment with each other.
Abstract:
A gapless, multithickness propagation structure is provided for implementing the continuous movement of magnetic bubble domains under the control of a reorienting in-plane field. Propagation is achieved by providing two parallel rows of H-shaped overlays of soft magnetic material in spaced-apart end-to-end relation adjacent to one surface of a magnetic medium having magnetic bubble domains therein. The ends of the H-shaped overlays in each row are connected to each other and the ends of the H-shaped overlays in the adjacent row by means of a transversely extending overlay strip having a thickness approximately one-half the thickness of the H-shaped overlays. High storage density, with a cell size 8W2 is obtained, where W is the line width of the elements in the structure.