Abstract:
A decoder for cylindrical magnetic domain shift registers having means to clear the information from selected registers thus enabling new information to be written into those registers. The decoder is incorporated into 2N closed loop shift registers and uses only a small part of the storage area of the magnetic sheet in which domains exist. It is activated by 2N control lines (N pairs). Depending upon the activation of the decoder, the information in a selected shift register is passed to a clear means which sends it into one of two paths depending upon the activation of the clear means. One path brings the information to a detector for destructive readout, while the other path brings the information to a domain splitter. The domain splitter splits the input domains into two parts, one of which propagates to the detector while the other returns to the proper shift register. Thus, non-destructive readout (NDRO) or destructive read-out (DRO) is provided depending upon the activation of the clear means.
Abstract:
A gapless, multithickness propagation structure is provided for implementing the continuous movement of magnetic bubble domains under the control of a reorienting in-plane field. Propagation is achieved by providing two parallel rows of H-shaped overlays of soft magnetic material in spaced-apart end-to-end relation adjacent to one surface of a magnetic medium having magnetic bubble domains therein. The ends of the H-shaped overlays in each row are connected to each other and the ends of the H-shaped overlays in the adjacent row by means of a transversely extending overlay strip having a thickness approximately one-half the thickness of the H-shaped overlays. High storage density, with a cell size 8W2 is obtained, where W is the line width of the elements in the structure.
Abstract:
A propagation means for moving interactive elements, such as magnetic bubble domains in a magnetic medium, which comprises a very simple structure that can be used under many bias field conditions. A confinement means serves to constrain the movement of bubble domains to a single dimension, the bubble domains being close enough to each other to interact with one another. A pump means associated with the confinement means produces a magnetic field to expand some of the bubble domains within the confinement means. Expansion of some of the domains causes increased forces on other domains within the confinement means, thereby moving these other domains. When the expansion of the domains is terminated, the expanded domains will shrink which will result in a net displacement of other bubble domains into the area previously occupied by the expanded domains. Thus, movement of domains within the confinement means occurs. Associated structure is used to pulse domains within the confinement means and to generate domains within the confinement means. Additionally, means are provided for putting bubble domains within the confinement means and for removing bubble domains from within the confinement means. This pump propagation structure has particular utility for use with a bubble domain lattice file where the bias field conditions are similar to that required in the pump shift register.
Abstract:
A bias magnetic field H.sub.p is produced in the plane of the magnetic sheet in which bubble domains exist, in any type of bubble domain apparatus. This planar bias field alters the spin system within the domain wall which leads to a change in domain wall mobility. Thus, the presence and absence of the planar bias field can be used as a control to trigger domain propagation and domain collapse throughout the entire magnetic sheet, or in selected portions of the magnetic sheet. Block access of domain information is thereby made possible as well as gating and decoding functions.
Abstract:
A transistor has its emitter formed as parallel strips in the surface of the body of the base with a first level of electrical contact for the emitter comprising parallel elongated members connected to each of the strips. The first level of electrical contact for the base comprises parallel elongated members extending parallel to each of the emitter elongated members and disposed between the emitter elongated members and on the outer sides of the two outermost emitter elongated members. The first level of electrical contact for the base also includes a rectangular shaped member, which contacts the ends of all of the base elongated members and the sides of the two outermost base elongated members. An electrical insulating layer is disposed over the first level of contacts and has holes therein to permit each of the emitter elongated members to be connected to a bus bar on a second level. Each of the sides of the rectangular shaped member is connected through holes in the insulating layer to a bus bar that forms a second level base contact.