-
1.Method of forming a fabricating semiconductor by doubly diffusion 失效
Title translation: 通过双扩散形成制造半导体的方法公开(公告)号:US3354009A
公开(公告)日:1967-11-21
申请号:US46816565
申请日:1965-06-29
Applicant: IBM
Inventor: KAY MANDEL , MOREHEAD JR FREDERICK F
IPC: C30B1/10 , H01L21/383 , H01L33/00
CPC classification number: H01L21/383 , C30B1/10 , H01L33/00 , Y10S252/951
-
公开(公告)号:US3361910A
公开(公告)日:1968-01-02
申请号:US56094666
申请日:1966-06-16
Applicant: IBM
Inventor: MOREHEAD JR FREDERICK F
CPC classification number: G03C1/705 , G11C13/048
-
公开(公告)号:US3326730A
公开(公告)日:1967-06-20
申请号:US44774365
申请日:1965-04-13
Applicant: IBM
Inventor: KAY MANDEL , MOREHEAD JR FREDERICK F , KUCZA JOSEPH A , HAMMER WILLIAM N
IPC: H01L21/383
CPC classification number: H01L21/383 , Y10S252/951
-
-