公开(公告)号：US11935967B2

公开(公告)日：2024-03-19

申请号：US17393452

申请日：2021-08-04

申请人： Japan Display Inc.

发明人： Takeshi Sakai ,  Yuichiro Hanyu ,  Masahiro Watabe

IPC分类号： H01L29/786 ,  H01L21/02 ,  H01L21/383 ,  H01L21/385 ,  H01L21/428 ,  H01L27/12 ,  H01L29/423 ,  G02F1/1343 ,  G02F1/1368 ,  H10K59/121

CPC分类号： H01L29/78696 ,  H01L21/02164 ,  H01L21/383 ,  H01L21/385 ,  H01L21/428 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/7869 ,  G02F1/134363 ,  G02F1/1368 ,  G02F1/13685 ,  H10K59/1213

摘要： The purpose of the invention is to form the TFT of the oxide semiconductor, in which influence of variation in mask alignment is suppressed, thus, manufacturing a display device having a TFT of stable characteristics. The concrete measure is as follows. A display device including plural pixels, each of the plural pixels having a thin film transistor (TFT) of an oxide semiconductor comprising: a width of the oxide semiconductor in the channel width direction is wider than a width of the gate electrode in the channel width direction.

公开(公告)号：US20180277392A1

公开(公告)日：2018-09-27

申请号：US15991080

申请日：2018-05-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Yuhei SATO ,  Keiji SATO ,  Tetsunori MARUYAMA ,  Junichi KOEZUKA

IPC分类号： H01L21/40 ,  H01L21/324 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L21/383 ,  H01L21/477 ,  H01L27/12

CPC分类号： H01L21/40 ,  H01L21/02175 ,  H01L21/02252 ,  H01L21/02565 ,  H01L21/02636 ,  H01L21/02664 ,  H01L21/324 ,  H01L21/383 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.

公开(公告)号：US20180218919A1

公开(公告)日：2018-08-02

申请号：US15819086

申请日：2017-11-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Toshinari SASAKI ,  Junichiro SAKATA ,  Hiroki OHARA ,  Shunpei YAMAZAKI

IPC分类号： H01L21/477 ,  H01L21/02 ,  H01L21/383 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L21/477 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/383 ,  H01L21/46 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

摘要： An object is to manufacture a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a method for manufacturing a semiconductor device including a thin film transistor in which an oxide semiconductor film is used for a semiconductor layer including a channel formation region, heat treatment (for dehydration or dehydrogenation) is performed to improve the purity of the oxide semiconductor film and reduce impurities including moisture or the like. After that, slow cooling is performed under an oxygen atmosphere. Besides impurities including moisture or the like exiting in the oxide semiconductor film, heat treatment causes reduction of impurities including moisture or the like exiting in a gate insulating layer and those in interfaces between the oxide semiconductor film and films which are provided over and below the oxide semiconductor and in contact therewith.

公开(公告)号：US10008611B2

公开(公告)日：2018-06-26

申请号：US15321975

申请日：2015-06-24

申请人： JOLED INC.

发明人： Mitsutaka Matsumoto ,  Arinobu Kanegae

IPC分类号： H01L29/08 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/383 ,  H01L21/385 ,  H01L27/32 ,  H01L27/12

CPC分类号： H01L29/7869 ,  H01L21/383 ,  H01L21/385 ,  H01L21/471 ,  H01L21/473 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78696 ,  H01L51/50

摘要： A thin film transistor includes: a substrate; an undercoat layer disposed on the substrate; an oxide semiconductor layer formed above the undercoat layer and including at least indium; a gate insulating layer located opposite the undercoat layer with the oxide semiconductor layer being between the gate insulating layer and the undercoat layer; a gate electrode located opposite the oxide semiconductor layer with the gate insulating layer being between the gate electrode and the oxide semiconductor layer; and a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein fluorine is included in a region which is an internal region in the oxide semiconductor layer and is close to the undercoat layer.

公开(公告)号：US09812533B2

公开(公告)日：2017-11-07

申请号：US13740313

申请日：2013-01-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki

IPC分类号： H01L29/10 ,  H01L29/26 ,  H01L21/383 ,  H01L21/477 ,  H01L29/49 ,  H01L29/786 ,  H01L29/78 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L29/263 ,  H01L21/383 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/78603 ,  H01L29/7869

摘要： One object of one embodiment of the present invention is to provide a highly reliable semiconductor device including an oxide semiconductor, which has stable electrical characteristics. In a method for manufacturing a semiconductor device, a first insulating film is formed; source and drain electrodes and an oxide semiconductor film electrically connected to the source and drain electrodes are formed over the first insulating film; heat treatment is performed on the oxide semiconductor film so that a hydrogen atom in the oxide semiconductor film is removed; oxygen doping treatment is performed on the oxide semiconductor film, so that an oxygen atom is supplied into the oxide semiconductor film; a second insulating film is formed over the oxide semiconductor film; and a gate electrode is formed over the second insulating film so as to overlap with the oxide semiconductor film.

公开(公告)号：US09768322B2

公开(公告)日：2017-09-19

申请号：US15225592

申请日：2016-08-01

申请人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

发明人： Gang Yu ,  Chan-Long Shieh ,  Tian Xiao ,  Fatt Foong

IPC分类号： H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L23/00 ,  H01L21/8234 ,  H01L21/4763 ,  H01L21/324 ,  H01L21/321 ,  H01L21/383 ,  H01L21/477 ,  H01L21/428 ,  H01L29/45 ,  H01L21/44 ,  H01L23/31

CPC分类号： H01L29/7869 ,  H01L21/321 ,  H01L21/324 ,  H01L21/383 ,  H01L21/428 ,  H01L21/44 ,  H01L21/47635 ,  H01L21/477 ,  H01L21/823418 ,  H01L23/3171 ,  H01L23/564 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method including providing a substrate with a gate, a layer of gate insulator material adjacent the gate, and a layer of metal oxide semiconductor material positioned on the gate insulator opposite the gate, forming a selectively patterned etch stop passivation layer and heating at elevated temperature in an oxygen-containing or nitrogen-containing or inert ambience to selectively increase the carrier concentration in regions of the metal oxide semiconductor not covered by the etch stop layer, on which overlying and spaced apart source/drain metals are formed. Subsequently heating the transistor in an oxygen-containing or nitrogen-containing or inert ambience to further improve the source/drain contacts and adjust the threshold voltage to a desired level. Providing additional passivation layer(s) on top of the transistor with electric insulation and barrier property to moisture and chemicals in the surrounding environment.

公开(公告)号：US20160372581A1

公开(公告)日：2016-12-22

申请号：US14905086

申请日：2015-09-11

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  HEFEI XINSHENG OPTOELECTRONICS TECHNOLOGY CO., LTD

发明人： Botao SONG ,  Liang Lin ,  Zhixiang ZOU ,  Yinhu HUANG

IPC分类号： H01L29/66 ,  H01L21/383 ,  H01L29/786 ,  H01L21/02

CPC分类号： H01L29/66969 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/383 ,  H01L27/1288 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/7869 ,  H01L29/78696

摘要： A thin film transistor and manufacturing method thereof, an array substrate and a display device are disclosed. The thin film transistor includes a source electrode, a drain electrode and an active layer; the source electrode, the drain electrode and the active layer are disposed in a same layer, the source electrode and the drain electrode are separately joined to the active layer through their respective side faces, a material of the source electrode and the drain electrode is metal, and a material of the active layer is a metal oxide semiconductor in correspondence with material of the source electrode and the drain electrode. With the thin film transistor, procedures can be decreased, thereby reducing costs.

摘要翻译： 公开了一种薄膜晶体管及其制造方法，阵列基板和显示装置。 薄膜晶体管包括源电极，漏电极和有源层; 源电极，漏电极和有源层设置在同一层中，源电极和漏电极通过其各自的侧面分别接合到有源层，源电极和漏电极的材料是金属 并且有源层的材料是与源电极和漏电极的材料相对应的金属氧化物半导体。 利用薄膜晶体管，可以降低程序，从而降低成本。

公开(公告)号：US09349806B2

公开(公告)日：2016-05-24

申请号：US14326575

申请日：2014-07-09

申请人： Taiwan Semiconductor Manufacturing Company Limited ,  National Chiao-Tung University

发明人： Yen-Teng Ho ,  Yi Chang

IPC分类号： H01L29/06 ,  H01L29/24 ,  H01L29/04 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/383

CPC分类号： H01L29/7849 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02458 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02661 ,  H01L21/383 ,  H01L29/04 ,  H01L29/045 ,  H01L29/1608 ,  H01L29/24 ,  H01L29/267 ,  H01L29/66969 ,  H01L29/7781

摘要： Disclosed is a semiconductor structure comprising a single crystal substrate, a channel layer formed above the substrate from a transition metal dichalcogenides (TMDC) material, and a single crystal epitaxial buffer layer formed between the substrate and the channel layer, wherein the buffer layer is formed from material having a lattice constant mismatch of less than 5% with the lattice constant of the channel layer material. Also, disclosed is a method of forming a semiconductor structure comprising selecting a substrate formed from a single crystal material, preparing the substrate for template growth, growing a template on the substrate wherein the template is formed from single crystal material, and growing channel material on the template wherein the channel material is formed from a TMDC material and wherein the buffer layer material has a lattice constant mismatch of less than 5% with the lattice constant of the channel layer material.

摘要翻译： 公开了一种半导体结构，其包括单晶衬底，在过渡金属二硫属元素（TMDC）材料上形成在衬底上的沟道层，以及形成在衬底和沟道层之间的单晶外延缓冲层，其中形成缓冲层 从具有小于5％的晶格常数失配的材料与沟道层材料的晶格常数。 此外，公开了一种形成半导体结构的方法，包括选择由单晶材料形成的衬底，制备用于模板生长的衬底，在衬底上生长模板，其中模板由单晶材料形成，并且在 模板，其中所述沟道材料由TMDC材料形成，并且其中所述缓冲层材料具有小于5％的晶格常数失配与所述沟道层材料的晶格常数。

公开(公告)号：US09269797B2

公开(公告)日：2016-02-23

申请号：US14632081

申请日：2015-02-26

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichi Koezuka ,  Naoto Yamade ,  Yuhei Sato ,  Yutaka Okazaki ,  Shunpei Yamazaki

IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L29/66 ,  H01L29/786 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477

CPC分类号： H01L27/1274 ,  H01L21/02565 ,  H01L21/02609 ,  H01L21/02667 ,  H01L21/383 ,  H01L21/44 ,  H01L21/477 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.

公开(公告)号：US20150325605A1

公开(公告)日：2015-11-12

申请号：US14416872

申请日：2014-05-27

申请人： BOE Technology Group Co., Ltd.

发明人： Xiaodi LIU ,  Gang WANG

IPC分类号： H01L27/12 ,  H01L27/092 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/383 ,  H01L29/786 ,  H01L21/477

CPC分类号： H01L27/1288 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/383 ,  H01L21/477 ,  H01L21/823807 ,  H01L27/092 ,  H01L27/1225 ,  H01L27/1262 ,  H01L27/127 ,  H01L29/7869

摘要： A complementary thin film transistor driving back plate and a preparing method thereof, and a display device are disclosed. The preparing method comprises: forming a lower electrode (102) on a base substrate (101); sequentially disposing a continuously grown dielectric layer (103), a semiconductor layer (104), and a diffusion protection layer (105); sequentially forming a no-photoresist region (107), an N-type thin film transistor preparation region (108), and a P-type thin film transistor preparation region (109); removing a photoresist layer (114) of the N-type thin film transistor preparation region (108); removing a diffusion protection layer (105) of the N-type thin film transistor preparation region (105); removing a photoresist layer (114) of the P-type thin film transistor preparation region (109); performing an oxidation treatment to the base substrate (101); disposing a passivation layer (111) on the base substrate (101); and forming an upper electrode (113) on the passivation layer (111).

摘要翻译： 互补薄膜晶体管驱动背板及其制备方法和显示装置。 制备方法包括：在基底（101）上形成下电极（102）; 顺序地设置连续生长的介电层（103），半导体层（104）和扩散保护层（105）; 依次形成无光致抗蚀剂区域（107），N型薄膜晶体管制备区域（108）和P型薄膜晶体管制备区域（109）; 去除所述N型薄膜晶体管制备区域（108）的光致抗蚀剂层（114）; 去除N型薄膜晶体管制备区域（105）的扩散保护层（105）; 去除P型薄膜晶体管制备区域（109）的光致抗蚀剂层（114）; 对所述基底基板进行氧化处理; 在所述基底基板（101）上设置钝化层（111）; 以及在所述钝化层（111）上形成上电极（113）。