公开(公告)号：US3588846A

公开(公告)日：1971-06-28

申请号：US3588846D

申请日：1968-12-05

Applicant: IBM

Inventor： LINTON RICHARD H ,  SONODA GEORGE Y

IPC: G11C11/402 ,  G11C11/412 ,  G11C11/40 ,  H03K3/286

CPC classification number: G11C11/4023 ,  G11C11/412

Abstract: THIS SPECIFICATION DESCRIBES A SEMICONDUCTOR STORAGE CELL FOR USE IN MONOLITHIC MEMORIES. THE STORAGE CELL HAS TWO CROSSCOUPLED FET''S WHICH FUNCTION AS THE STORAGE ELEMENTS OF THE CELL. THE CROSSCOUPLED FET''S ARE ADDRESSED POWERED THROUGH INPUT-OUTPUT FET''S WHEN THE CELL IS INTERROGATED FOR READING. WHEN THE CELL IS NOT BEING SO INTERROGATED, THE CROSSCOUPLED FET''S ARE SUPPLIED POWER FROM A SOURCE WHICH IS CONNECTED TO EACH OF THE CROSSCOUPLED FET''S BY A SEPARATE LOAD FET. THE GATES OF THOSE LOAD FET''S ARE BIASED SO THE LOAD FET''S SUPPLY CHARGE TO THE CROSSCOUPLED FET''S WHILE THE STORAGE CELL IS NOT BEING INTERROGATED BUT DRAW CHARGE FROM THE CROSSCOUPLED FET''S WHEN THE CROSSCOUPLED FET''S ARE ADDRESSED FOR READING. BY BIASING THE LOAD FET''S IN THIS

MANNER, THE POTENTIAL ON THE DRAIN CAN BE REDUCED SO AS TO REDUCE THE OVERALL POWER DISSIPATION OF THE STORAGE CELL.

公开(公告)号：US3548388A

公开(公告)日：1970-12-15

申请号：US78152768

申请日：1968-12-05

Applicant: IBM

Inventor： SONODA GEORGE Y

IPC: G11C11/41 ,  G11C11/34 ,  G11C11/402 ,  G11C11/412 ,  G11C11/417 ,  G11C11/418 ,  H03K3/356 ,  G11C11/40

CPC classification number: G11C11/417 ,  G11C11/4023 ,  G11C11/412 ,  G11C11/418 ,  H03K3/35606 ,  H03K3/356095