公开(公告)号：US3406048A

公开(公告)日：1968-10-15

申请号：US38594864

申请日：1964-07-29

Applicant: IBM

Inventor： MARTIN IMMENDORFER ,  SPIELMANN WERNER K

IPC: H01L21/205

CPC classification number: H01L21/02395 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S148/007 ,  Y10S148/048 ,  Y10S148/056 ,  Y10S148/071

Abstract: A gallium arsenide crystal is produced by introducing a mixture of gallium hydride and arsenic chloride and/or arsenic hydride into the region surrounding a gallium arsenide crystal substrate heated to a temperature above the pyrolitic disintegration temperature of the mixture, whereby pyrolitic disintegration of the mixture takes place and a gallium arsenide crystal is grown epitaxially on the substrate. The gallium and arsenic compounds may be in the gaseous or liquid form. Hydrogen may be included in the mixture. A GaAs wafer 4, placed on graphite block 2 coated with thin quartz layer 3 situated inside quartz reaction chamber 1, is heated to 600 DEG C. by induction windings 5. A gas mixture comprising H2, Ga2H6, AsCl3 or H2, Ga2H6, AsH3 at 20 DEG C. is passed over the GaAs wafer through 6 and 7. Effluent gas mixture flows out through 8, and may be directed into an additional reaction chamber. By including suitable doping material in the gas mixture, PN junction may be produced on a seed doped with P-type impurities. The growth of the epitaxial layer may be limited to certain areas determined by a thermal mask.

公开(公告)号：US3278274A

公开(公告)日：1966-10-11

申请号：US41106764

申请日：1964-11-13

Applicant: IBM

Inventor： WOLFGANG LIEBMANN ,  SPIELMANN WERNER K

IPC: C30B9/00 ,  C30B15/00 ,  C30B15/16

CPC classification number: C30B15/16 ,  C30B9/00 ,  C30B15/00 ,  C30B29/36 ,  Y10S117/90 ,  Y10S117/904 ,  Y10S117/905

Abstract: Monocrystalline silicon carbide is produced by heating silicon carbide and chromium to produce a melt, inserting a seed crystal of silicon carbide into a growth region of said melt so that the silicon carbide starts to grow on the crystal, further heating a selected region of the melt spaced from the crystal to between 1700 DEG C. and 1800 DEG C. so that the chromium-enriched melt in the growth region moves towards the selected region, and withdrawing the seed crystal from the melt as the crystal grows. The silicon carbide and chromium may be heated in a crucible made of silicon carbide. The means for further heating may be a laser or an electron beam. The crucible may be heated to between 1550 DEG and 1650 DEG C. with the temperature of the growth region between 1650 DEG and 1750 DEG C. As shown, silicon carbide crucible 1 containing a melt 2 comprising 87% chromium and 13% silicon carbide is heated to 1600 DEG C. by induction furnace 5. An annular selected region 4 of the melt 2 is further heated to 1750 DEG C. by electron beams 13 and 14 emitted by electron sources 6 and 7. Silicon carbide seed crystal 11 is dipped into a growth region surrounded by selected region 4 and is clamped in clamp 10 mounted at the end of lead screw 9 rotating in a threaded hole of block 8. The seed grows in the form of bar 12 and is pulled out of the melt 2 by rotating screw 9. The temperature of the growth region is 1700 DEG C. Part of the chromium vaporizes at the selected region. The temperature of the crucible is controlled such that sufficient silicon carbide is transferred from the crucible into the melt to keep a constant quantity of silicon carbide in the melt.ALSO:Monocrystalline silicon carbide is produced by heating silicon carbide and chromium to produce a melt, inserting a seed crystal of silicon carbide into a growth region of said melt so that the silicon carbide starts to grow on the crystal, further heating a selected region of the melt spaced from the crystal to between 1700 DEG C. and 1800 DEG C. so that the chromium-enriched melt in the growth region moves towards the selected region, and withdrawing the seed crystal from the melt as the crystal grows. The silicon carbide and chromium may be melted in a crucible made of silicon carbide. The crucible may be heated to between 1550 DEG C. and 1650 DEG C. with the temperature of the growth region between 1650 DEG C. and 1750 DEG C. According to the Fig. (not shown) silicon carbide crucible 1 containing a melt 2 comprising 87% chromium and 13% silicon carbide is heated to 1600 DEG C. by induction furnace 5. An annular selected region 4 of the melt 2 is further heated to 1750 DEG C. by electron beams 13 and 14 of lasers. Silicon carbide seed crystal 11 is dipped into a growth region surrounded by selected region 4 and is clamped in clamp 10 mounted at the end of lead screw 9 rotating in a threaded hole of block 8. The seed grows in the form of bar 12 and is pulled out of melt 2 by rotating screw 9. The temperature of the growth region is 1700 DEG C. Part of the chromium vapourises at the selected region. The temperature of the crucible is controlled such that sufficient silicon carbide is transferred from the crucible into the melt to keep a constant amount of silicon carbide in the melt.