公开(公告)号：US3658678A

公开(公告)日：1972-04-25

申请号：US3658678D

申请日：1969-11-26

Applicant: IBM

Inventor： GREGOR LAWRENCE V ,  ZUEGEL MARKUS

IPC: H01L29/78 ,  C23C14/10 ,  H01J37/34 ,  H01L21/316 ,  H01L23/29 ,  H01L29/00 ,  C23C15/00

CPC classification number: H01L23/291 ,  C23C14/10 ,  H01J37/3402 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02266 ,  H01L21/31612 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A process is described for passivating completed FET devices by encapsulation. High purity silicon dioxide is deposited on the completed field effect transistor (FET) device by the RF sputtering of a high purity silicon dioxide target in an inert atmosphere. The sputtered silicon dioxide layer is made approximately 1.5 times the thickness of the FET gate. Then, the device is annealed in a non-oxidizing atmosphere to restore the threshold voltage of the FET to its desired value prior to sputtering. Appropriate ranges are disclosed for the values of the temperature and the RF power density of the sputtering step and for the temperature and the time of the annealing step.

Abstract translation: 描述了通过封装钝化完成的FET器件的过程。 通过在惰性气氛中的高纯度二氧化硅靶的RF溅射，在完整的场效应晶体管（FET）器件上沉积高纯二氧化硅。 溅射的二氧化硅层约为FET栅极厚度的1.5倍。 然后，在非氧化气氛下对器件进行退火，在溅射之前将FET的阈值电压恢复到其期望值。 对于溅射步骤的温度和RF功率密度的值以及退火步骤的温度和时间，公开了适当的范围。