公开(公告)号：US12017909B2

公开(公告)日：2024-06-25

申请号：US16895523

申请日：2020-06-08

Applicant: IMEC VZW

Inventor： Deniz Sabuncuoglu Tezcan ,  Antonia Malainou

IPC: B81C1/00

CPC classification number: B81C1/00238 ,  B81C1/00269 ,  B81C1/00325 ,  B81B2207/015 ,  B81C1/00301

Abstract: A Microelectromechanical Systems (MEMS) device combining a MEMS layer and a Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuit (IC), and its fabrication method is provided. The fabrication method includes: processing the MEMS layer on a first semiconductor substrate, the MEMS layer including one or more movable structures and one or more anchor structures; processing one or more first contacts on the first semiconductor substrate, each first contact being processed into one of the anchor structures and being configured to bias that anchor structure; processing the CMOS IC on a second semiconductor substrate; processing one or more second contacts on the second semiconductor substrate, each second contact being connected to the CMOS IC; and bonding the first semiconductor substrate to the second semiconductor substrate such that each first contact directly contacts one of the second contacts. The method can allow fabricating the MEMS device without vapor HF etching. The method can further enable zero level packaging, fusion bonding, a C-SOI approach, and high-vacuum sealing. An integrated zero level hermetic packaging MEMS device can be realized based on fusion bonding of moisture resistant materials. Further, Cu/dielectric bonding and electrical connections to individual parts of the MEMS device are allowed, in order to apply isolated voltages.