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    METHOD OF PERFORMING METROLOGY ON A MICROFABRICATION PATTERN
    2.
    发明公开
    METHOD OF PERFORMING METROLOGY ON A MICROFABRICATION PATTERN 审中-公开

    公开(公告)号：US20230298854A1

    公开(公告)日：2023-09-21

    申请号：US18184366

    申请日：2023-03-15

    Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

    Inventor： Joren Severi ,  Gian Francesco Lorusso ,  Danilo De Simone

    IPC: H01J37/28 ,  G06T7/00

    CPC classification number: H01J37/28 ,  G06T7/001 ,  H01J2237/2817 ,  G06T2207/30148

    Abstract: A method includes generating, by a SEM, sets of frames corresponding to regions of a microfabrication pattern, for each set of frames, estimating feature data representing edge positions, linewidths, or centerline positions of one or more features of each region of the pattern, and computing a preliminary estimate of a roughness parameter from the feature data. The roughness parameter is indicative of a line edge roughness, a linewidth roughness, or a pattern placement roughness of the one or more features. The method further includes fitting a model equation to the preliminary estimates of the roughness parameter using a model parameter dependent on the number of frames of each set of frames, the model equation relating the model parameter to the roughness parameter; and computing a final estimate of the roughness parameter as an asymptotic value of the fitted model equation.

    Method for Producing a Pattern of Features by Lithography and Etching
    3.
    发明申请
    Method for Producing a Pattern of Features by Lithography and Etching 审中-公开

    公开(公告)号：US20190189458A1

    公开(公告)日：2019-06-20

    申请号：US16218749

    申请日：2018-12-13

    Applicant: IMEC VZW

    Inventor： Waikin Li ,  Danilo De Simone ,  Sandip Halder ,  Frederic Lazzarino

    IPC: H01L21/308 ,  G03F7/20

    Abstract: A method for producing a pattern of features on a substrate may involve performing two exposure steps on a resist layer applied to the substrate, followed by a single etching step. In the two exposures, the same pattern of mask features is used, but with possibly differing dimensions and with the pattern applied in the second exposure being shifted in position relative to the pattern in the first exposure. The shift, lithographic parameters, and/or possibly differing dimensions are configured such that a number of resist areas exposed in the second exposure overlap one or more resist areas exposed in the first exposure. When the pattern of mask features is a regular 2-dimensional array, the method produces of an array of holes or pillars that is denser than the original array. Varying the mask patterns can produce different etched structure shapes, such as a zig-zag pattern.

    State Transition Temperature of Resist Structures
    4.
    发明公开
    State Transition Temperature of Resist Structures 审中-公开

    公开(公告)号：US20240125721A1

    公开(公告)日：2024-04-18

    申请号：US18481520

    申请日：2023-10-05

    Applicant: IMEC VZW ,  Katholieke Universiteit Leuven

    Inventor： Joren Severi ,  Danilo De Simone

    IPC: G01N25/02 ,  G03F7/00

    CPC classification number: G01N25/02 ,  G03F7/70608 ,  G03F7/706837

    Abstract: A method for determining a value representative of a state transition temperature of a resist structure, formed of a resist material and having predetermined dimensions, on an underlayer material includes: receiving data earlier obtained, the data representing a correlation between a second value for a measure representative of a spatial feature of at least one resist structure of each of a plurality of entities after applying a heat treatment, and a temperature at which the heat treatment is applied, each entity comprising the at least one resist structure, formed of the resist material and having the predetermined dimensions before the heat treatment, on the underlayer material, and wherein the measure has a first value before the heat treatment, and determining, from the correlation, the value representative of the state transition temperature when the heat treatment would be performed at such temperature, the second value differs by a predetermined amount from the first value.

    Method for producing a pattern of features by lithography and etching
    6.
    发明授权
    Method for producing a pattern of features by lithography and etching 有权

    公开(公告)号：US10818504B2

    公开(公告)日：2020-10-27

    申请号：US16218749

    申请日：2018-12-13

    Applicant: IMEC VZW

    Inventor： Waikin Li ,  Danilo De Simone ,  Sandip Halder ,  Frederic Lazzarino

    IPC: H01L21/308 ,  G03F7/20 ,  G03F1/70

    Abstract: A method for producing a pattern of features on a substrate may involve performing two exposure steps on a resist layer applied to the substrate, followed by a single etching step. In the two exposures, the same pattern of mask features is used, but with possibly differing dimensions and with the pattern applied in the second exposure being shifted in position relative to the pattern in the first exposure. The shift, lithographic parameters, and/or possibly differing dimensions are configured such that a number of resist areas exposed in the second exposure overlap one or more resist areas exposed in the first exposure. When the pattern of mask features is a regular 2-dimensional array, the method produces of an array of holes or pillars that is denser than the original array. Varying the mask patterns can produce different etched structure shapes, such as a zig-zag pattern.

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