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公开(公告)号：US20210011370A1
公开(公告)日：2021-01-14
申请号：US16926460
申请日：2020-07-10
Applicant: IMEC VZW
Inventor： Joern-Holger Franke , Emily Gallagher
Abstract: The present disclosure relates to an extreme ultraviolet lithography, EUVL, device comprising: a reticle comprising a lithographic pattern to be imaged on a target wafer; a light-transmissive pellicle membrane mounted in front of, and parallel to, the reticle, wherein the pellicle membrane scatters transmitted light along a scattering axis; and an extreme ultraviolet, EUV, illumination system configured to illuminate the reticle through the pellicle membrane, wherein an illumination distribution provided by the EUV illumination system is asymmetric as seen in a source-pupil plane of the EUV illumination system; wherein light reflected by the reticle and then transmitted through the pellicle membrane comprises a non-scattered fraction and a scattered fraction formed by light scattered by the pellicle membrane; the EUVL device further comprising: an imaging system having an acceptance cone configured to capture a portion of the light reflected by the reticle and then transmitted through the pellicle membrane.
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公开(公告)号：US11360380B2
公开(公告)日：2022-06-14
申请号：US16926460
申请日：2020-07-10
Applicant: IMEC VZW
Inventor： Joern-Holger Franke , Emily Gallagher
Abstract: The present disclosure relates to an extreme ultraviolet lithography, EUVL, device comprising: a reticle comprising a lithographic pattern to be imaged on a target wafer; a light-transmissive pellicle membrane mounted in front of, and parallel to, the reticle, wherein the pellicle membrane scatters transmitted light along a scattering axis; and an extreme ultraviolet, EUV, illumination system configured to illuminate the reticle through the pellicle membrane, wherein an illumination distribution provided by the EUV illumination system is asymmetric as seen in a source-pupil plane of the EUV illumination system; wherein light reflected by the reticle and then transmitted through the pellicle membrane comprises a non-scattered fraction and a scattered fraction formed by light scattered by the pellicle membrane; the EUVL device further comprising: an imaging system having an acceptance cone configured to capture a portion of the light reflected by the reticle and then transmitted through the pellicle membrane.
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公开(公告)号：US11181818B2
公开(公告)日：2021-11-23
申请号：US16528093
申请日：2019-07-31
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Emily Gallagher , Joern-Holger Franke , Ivan Pollentier , Marina Timmermans , Marina Mariano Juste
Abstract: The present disclosure relates to a lithography scanner including: a light source configured to emit extreme ultra-violet (EUV) light; a pellicle including an EUV transmissive membrane that is configured to scatter the EUV light into an elliptical scattering pattern having a first major axis; a reticle configured to reflect the scattered EUV light through the pellicle; and an imaging system configured to project a portion of the reflected light that enters an acceptance cone of the imaging system onto a target wafer, wherein a cross section of the acceptance cone has a second major axis, and wherein the pellicle is arranged such that the first major axis is oriented at an angle relative to the second major axis.
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公开(公告)号：US20200209737A1
公开(公告)日：2020-07-02
申请号：US16528093
申请日：2019-07-31
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Emily Gallagher , Joern-Holger Franke , Ivan Pollentier , Marina Timmermans , Marina Mariano Juste
Abstract: The present disclosure relates to a lithography scanner including: a light source configured to emit extreme ultra-violet (EUV) light; a pellicle including an EUV transmissive membrane that is configured to scatter the EUV light into an elliptical scattering pattern having a first major axis; a reticle configured to reflect the scattered EUV light through the pellicle; and an imaging system configured to project a portion of the reflected light that enters an acceptance cone of the imaging system onto a target wafer, wherein a cross section of the acceptance cone has a second major axis, and wherein the pellicle is arranged such that the first major axis is oriented at an angle relative to the second major axis.
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