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公开(公告)号：US11163229B2
公开(公告)日：2021-11-02
申请号：US16674582
申请日：2019-11-05
发明人： Marina Mariano Juste , Marina Timmermans , Ivan Pollentier , Cedric Huyghebaert , Emily Gallagher
摘要： A method for protecting a photomask comprises: (i) providing the photomask, (ii) providing a border, (iii) depositing at least two electrical contacts on the border, (iv) mounting a film comprising carbon nanotubes on the border such that the film comprises a free-standing part, wherein after the mounting and depositing steps, the electrical contacts are in contact with the film, (v) inducing a current through the free-standing part of the film by biasing at least one pair of the electrical contacts, and (vi) mounting the border on at least one side of the photomask with the free-standing part of the film above the photomask.
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公开(公告)号：US11181818B2
公开(公告)日：2021-11-23
申请号：US16528093
申请日：2019-07-31
发明人： Emily Gallagher , Joern-Holger Franke , Ivan Pollentier , Marina Timmermans , Marina Mariano Juste
摘要： The present disclosure relates to a lithography scanner including: a light source configured to emit extreme ultra-violet (EUV) light; a pellicle including an EUV transmissive membrane that is configured to scatter the EUV light into an elliptical scattering pattern having a first major axis; a reticle configured to reflect the scattered EUV light through the pellicle; and an imaging system configured to project a portion of the reflected light that enters an acceptance cone of the imaging system onto a target wafer, wherein a cross section of the acceptance cone has a second major axis, and wherein the pellicle is arranged such that the first major axis is oriented at an angle relative to the second major axis.
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公开(公告)号：US20200209737A1
公开(公告)日：2020-07-02
申请号：US16528093
申请日：2019-07-31
发明人： Emily Gallagher , Joern-Holger Franke , Ivan Pollentier , Marina Timmermans , Marina Mariano Juste
摘要： The present disclosure relates to a lithography scanner including: a light source configured to emit extreme ultra-violet (EUV) light; a pellicle including an EUV transmissive membrane that is configured to scatter the EUV light into an elliptical scattering pattern having a first major axis; a reticle configured to reflect the scattered EUV light through the pellicle; and an imaging system configured to project a portion of the reflected light that enters an acceptance cone of the imaging system onto a target wafer, wherein a cross section of the acceptance cone has a second major axis, and wherein the pellicle is arranged such that the first major axis is oriented at an angle relative to the second major axis.
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