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公开(公告)号：US11360380B2
公开(公告)日：2022-06-14
申请号：US16926460
申请日：2020-07-10
Applicant: IMEC VZW
Inventor： Joern-Holger Franke , Emily Gallagher
Abstract: The present disclosure relates to an extreme ultraviolet lithography, EUVL, device comprising: a reticle comprising a lithographic pattern to be imaged on a target wafer; a light-transmissive pellicle membrane mounted in front of, and parallel to, the reticle, wherein the pellicle membrane scatters transmitted light along a scattering axis; and an extreme ultraviolet, EUV, illumination system configured to illuminate the reticle through the pellicle membrane, wherein an illumination distribution provided by the EUV illumination system is asymmetric as seen in a source-pupil plane of the EUV illumination system; wherein light reflected by the reticle and then transmitted through the pellicle membrane comprises a non-scattered fraction and a scattered fraction formed by light scattered by the pellicle membrane; the EUVL device further comprising: an imaging system having an acceptance cone configured to capture a portion of the light reflected by the reticle and then transmitted through the pellicle membrane.
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公开(公告)号：US10712659B2
公开(公告)日：2020-07-14
申请号：US15979800
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Emily Gallagher , Cedric Huyghebaert , Ivan Pollentier , Hanns Christoph Adelmann , Marina Timmermans , Jae Uk Lee
Abstract: The present disclosure relates to a method for forming a carbon nanotube pellicle membrane for an extreme ultraviolet lithography reticle, the method comprising: bonding together overlapping carbon nanotubes of at least one carbon nanotube film by pressing the at least one carbon nanotube film between a first pressing surface and a second pressing surface, thereby forming a free-standing carbon nanotube pellicle membrane. The present disclosure also relates to a method for forming a pellicle for extreme ultraviolet lithography and for forming a reticle system for extreme ultraviolet lithography respectively.
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公开(公告)号：US20180329290A1
公开(公告)日：2018-11-15
申请号：US15979813
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Rik Jonckheere , Cedric Huyghebaert , Emily Gallagher
CPC classification number: G03F1/64 , G03F1/62 , G03F7/70825 , G03F7/70975 , G03F7/70983
Abstract: The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.
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公开(公告)号：US11181818B2
公开(公告)日：2021-11-23
申请号：US16528093
申请日：2019-07-31
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Emily Gallagher , Joern-Holger Franke , Ivan Pollentier , Marina Timmermans , Marina Mariano Juste
Abstract: The present disclosure relates to a lithography scanner including: a light source configured to emit extreme ultra-violet (EUV) light; a pellicle including an EUV transmissive membrane that is configured to scatter the EUV light into an elliptical scattering pattern having a first major axis; a reticle configured to reflect the scattered EUV light through the pellicle; and an imaging system configured to project a portion of the reflected light that enters an acceptance cone of the imaging system onto a target wafer, wherein a cross section of the acceptance cone has a second major axis, and wherein the pellicle is arranged such that the first major axis is oriented at an angle relative to the second major axis.
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公开(公告)号：US20200209737A1
公开(公告)日：2020-07-02
申请号：US16528093
申请日：2019-07-31
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Emily Gallagher , Joern-Holger Franke , Ivan Pollentier , Marina Timmermans , Marina Mariano Juste
Abstract: The present disclosure relates to a lithography scanner including: a light source configured to emit extreme ultra-violet (EUV) light; a pellicle including an EUV transmissive membrane that is configured to scatter the EUV light into an elliptical scattering pattern having a first major axis; a reticle configured to reflect the scattered EUV light through the pellicle; and an imaging system configured to project a portion of the reflected light that enters an acceptance cone of the imaging system onto a target wafer, wherein a cross section of the acceptance cone has a second major axis, and wherein the pellicle is arranged such that the first major axis is oriented at an angle relative to the second major axis.
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Patent Agency Ranking
公开(公告)号：US11092886B2
公开(公告)日：2021-08-17
申请号：US15979827
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Marina Timmermans , Emily Gallagher , Ivan Pollentier , Hanns Christoph Adelmann , Cedric Huyghebaert , Jae Uk Lee
Abstract: The present disclosure relates to a method for forming a pellicle for extreme ultraviolet lithography, the method comprising: forming a coating of a first material on a peripheral region of a main surface of a carbon nanotube pellicle membrane, the membrane including a carbon nanotube film, arranging the carbon nanotube pellicle membrane on a pellicle frame with the peripheral region facing a support surface of the pellicle frame, wherein the support surface of the pellicle frame is formed by a second material, and bonding together the coating of the carbon nanotube pellicle membrane and the pellicle support surface by pressing the carbon nanotube pellicle membrane and the pellicle support surface against each other. The present disclosure relates also relates to a method for forming a reticle system for extreme ultraviolet lithography.
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公开(公告)号：US10720336B2
公开(公告)日：2020-07-21
申请号：US16117480
申请日：2018-08-30
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Emily Gallagher , Roel Gronheid , Jan Doise , Iacopo Mochi
IPC: H01L21/308 , H01L21/027 , G03F7/11 , G03F7/00 , G03F1/36 , G03F1/68 , C09D153/00
Abstract: A mask structure and a method for manufacturing a mask structure for a lithography process is provided. The method includes providing a substrate covered with an absorber layer on a side thereof; providing a patterned layer over the absorber layer, the patterned layer comprising at least one opening; and forming at least one assist mask feature in the at least one opening, wherein the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising providing a BCP material in the at least one opening and inducing phase separation of a BCP material into a first component and a second component, the first component being the at least one assist mask feature and being periodically distributed with respect to the second component.
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公开(公告)号：US20190074186A1
公开(公告)日：2019-03-07
申请号：US16117480
申请日：2018-08-30
Applicant: IMEC VZW , Katholieke Universiteit Leuven, KU LEUVEN R&D
Inventor： Emily Gallagher , Roel Gronheid , Jan Doise , Iacopo Mochi
IPC: H01L21/308 , H01L21/027 , G03F7/11
CPC classification number: H01L21/3086 , C09D153/005 , G03F1/36 , G03F1/68 , G03F7/0002 , G03F7/11 , H01L21/0274 , H01L21/3088
Abstract: A mask structure and a method for manufacturing a mask structure for a lithography process is provided. The method includes providing a substrate covered with an absorber layer on a side thereof; providing a patterned layer over the absorber layer, the patterned layer comprising at least one opening; and forming at least one assist mask feature in the at least one opening, wherein the at least one assist mask feature is formed by performing a directed self-assembly (DSA) patterning process comprising providing a BCP material in the at least one opening and inducing phase separation of a BCP material into a first component and a second component, the first component being the at least one assist mask feature and being periodically distributed with respect to the second component.
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公开(公告)号：US11599019B2
公开(公告)日：2023-03-07
申请号：US17131297
申请日：2020-12-22
Applicant: IMEC VZW
Inventor： Marina Timmermans , Cedric Huyghebaert , Ivan Pollentier , Elie Schapmans , Emily Gallagher
Abstract: According to an aspect of the present disclosure there is provided a method for forming an EUVL pellicle, the method comprising: coating a carbon nanotube, CNT, membrane, and mounting the CNT membrane to a pellicle frame, wherein coating the CNT membrane comprises: pre-coating CNTs of the membrane with a seed material, and forming an outer coating on the pre-coated CNTs, the outer coating covering the pre-coated CNTs, the forming of the outer coating comprising depositing a coating material on the pre-coated CNTs by atomic layer deposition.
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公开(公告)号：US10353284B2
公开(公告)日：2019-07-16
申请号：US15979813
申请日：2018-05-15
Applicant: IMEC VZW , Imec USA Nanoelectronics Design Center
Inventor： Rik Jonckheere , Cedric Huyghebaert , Emily Gallagher
Abstract: The present disclosure provides a lithographic reticle system comprising a reticle, a first pellicle membrane mounted in front of the reticle, and a second pellicle membrane mounted in front of the first pellicle membrane, wherein the first pellicle membrane is arranged between the reticle and the second pellicle membrane, and wherein the second pellicle membrane is releasably mounted in relation to the first pellicle membrane and the reticle.
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