公开(公告)号：US11929385B2

公开(公告)日：2024-03-12

申请号：US17366843

申请日：2021-07-02

Applicant: IMEC VZW

Inventor： Yunlong Li ,  Stefano Guerrieri ,  Ming Mao ,  Luis Moreno Hagelsieb

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

Abstract: A method for forming a pixelated optoelectronic stack comprises forming a stacked layer structure that comprises a bottom electrode layer, an optoelectronic layer over the bottom electrode layer, and a patterned hard-mask comprising a pattern over the optoelectronic layer. The method comprises replicating the pattern into the optoelectronic layer and the bottom electrode layer, thereby forming a first intermediate pixelated stack comprising at least two islands of stack separated from one another by stack-free areas; providing an electrically insulating layer on the first intermediate pixelated stack; removing a top portion of the electrically insulating layer and removing any remaining hard-mask so that a top surface of the electrically insulating layer is coplanar with an exposed top surface of the first intermediate pixelated stack, yielding a second intermediate pixelated stack; and forming a top transparent electrode layer over the second intermediate pixelated stack.

公开(公告)号：US20220005862A1

公开(公告)日：2022-01-06

申请号：US17366843

申请日：2021-07-02

Applicant: IMEC VZW

Inventor： Yunlong Li ,  Stefano Guerrieri ,  Ming Mao ,  Luis Moreno Hagelsieb

IPC: H01L27/146

Abstract: A method for forming a pixelated optoelectronic stack comprises forming a stacked layer structure that comprises a bottom electrode layer, an optoelectronic layer over the bottom electrode layer, and a patterned hard-mask comprising a pattern over the optoelectronic layer. The method comprises replicating the pattern into the optoelectronic layer and the bottom electrode layer, thereby forming a first intermediate pixelated stack comprising at least two islands of stack separated from one another by stack-free areas; providing an electrically insulating layer on the first intermediate pixelated stack; removing a top portion of the electrically insulating layer and removing any remaining hard-mask so that a top surface of the electrically insulating layer is coplanar with an exposed top surface of the first intermediate pixelated stack, yielding a second intermediate pixelated stack; and forming a top transparent electrode layer over the second intermediate pixelated stack.