公开(公告)号：US11757056B2

公开(公告)日：2023-09-12

申请号：US17081829

申请日：2020-10-27

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Yunlong Li ,  Epimitheas Georgitzikis ,  David Cheyns

IPC: H01L31/0392 ,  H01L27/146 ,  H01L31/0232 ,  H01L31/0224

CPC classification number: H01L31/0392 ,  H01L27/14634 ,  H01L31/02327 ,  H01L31/022408

Abstract: An aspect comprising an optical sensor is disclosed. The optical sensor comprises stacked layers comprising: a window layer configured to allow the passage of photons; a sensing layer configured to generate charges upon impinging of the photons through the window layer; and a bottom electrode layer comprising at least one bottom electrode for receiving charges generated in the sensing layer. The sensing layer is sandwiched between the window layer and the bottom electrode layer. The at least one bottom electrode of the bottom electrode layer comprises conductive material with reflectivity higher than 0.7 to reflect back received photons into the sensing layer; and the at least one bottom electrode is obtained by semiconductor device fabrication techniques.

公开(公告)号：US20230197761A1

公开(公告)日：2023-06-22

申请号：US18068775

申请日：2022-12-20

Applicant: IMEC VZW

Inventor： Yunlong Li ,  Deniz Sabuncuoglu Tezcan ,  Pawel Malinowski ,  Gauri Karve

IPC: H01L27/146

CPC classification number: H01L27/14687 ,  H01L27/14689 ,  H01L27/14692 ,  H10K39/32

Abstract: An example includes a method for producing a multipixel detector, the method including: providing a bottom layer including a first and a second bottom electrode, depositing an electrically insulating layer on the bottom layer, forming a first opening through the electrically insulating layer, depositing a first photon absorbing material in the first opening, forming a second opening through the electrically insulating layer, depositing a second photon absorbing material in the second opening, planarizing the deposited electrically insulating layer, the first photon absorbing material, and the second photon absorbing material to form a flat surface, and forming a common top electrode on top of the flat surface.

公开(公告)号：US20210384700A1

公开(公告)日：2021-12-09

申请号：US17340351

申请日：2021-06-07

Applicant: IMEC VZW

Inventor： Charles Caer ,  Philippe Soussan ,  Deniz Sabuncuoglu Tezcan ,  Gauri Karve ,  Yunlong Li

IPC: H01S5/026 ,  H01S5/30 ,  H01S5/042

Abstract: The disclosure relates to a method for processing a laser device, for example a III-V on silicon laser, including: providing a carrier substrate; forming a grating structure on the carrier substrate, wherein the grating structure delimits a cavity on a surface of the carrier substrate; placing a die in the cavity and bonding the die to the carrier substrate, wherein the die comprises an active region including a III-V semiconductor material; transferring the die from the carrier substrate to a silicon substrate by bonding an exposed side of the die to the silicon substrate and subsequently debonding the carrier substrate from the die; and forming a photonic structure, for example a silicon waveguide, coupled to the die.

公开(公告)号：US11929385B2

公开(公告)日：2024-03-12

申请号：US17366843

申请日：2021-07-02

Applicant: IMEC VZW

Inventor： Yunlong Li ,  Stefano Guerrieri ,  Ming Mao ,  Luis Moreno Hagelsieb

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643

Abstract: A method for forming a pixelated optoelectronic stack comprises forming a stacked layer structure that comprises a bottom electrode layer, an optoelectronic layer over the bottom electrode layer, and a patterned hard-mask comprising a pattern over the optoelectronic layer. The method comprises replicating the pattern into the optoelectronic layer and the bottom electrode layer, thereby forming a first intermediate pixelated stack comprising at least two islands of stack separated from one another by stack-free areas; providing an electrically insulating layer on the first intermediate pixelated stack; removing a top portion of the electrically insulating layer and removing any remaining hard-mask so that a top surface of the electrically insulating layer is coplanar with an exposed top surface of the first intermediate pixelated stack, yielding a second intermediate pixelated stack; and forming a top transparent electrode layer over the second intermediate pixelated stack.

公开(公告)号：US20230154914A1

公开(公告)日：2023-05-18

申请号：US18055763

申请日：2022-11-15

Applicant: IMEC VZW

Inventor： Gauri Karve ,  Yunlong Li ,  Luc Haspeslagh ,  Philippe Soussan ,  Deniz Sabuncuoglu Tezcan

IPC: H01L25/00 ,  H01L21/56

CPC classification number: H01L25/50 ,  H01L21/561 ,  H01L21/568

Abstract: According to a preferred embodiment of the method of the invention, an assembly is produced comprising a temporary wafer and one or more tiles that are removably attached to the temporary wafer, preferably through a temporary adhesive layer. The tiles comprise a carrier portion and an active material portion. The active material portion is attached to the temporary carrier. The assembly further comprises a single continuous layer of the first material surrounding each of the one or more tiles. Then the back side of the carrier portions of the tiles and of the continuous layer of the first material are simultaneously planarized, and the planarized back sides of the tiles and of the continuous layer of the first material are bonded to a permanent carrier wafer, after which the temporary carrier wafer is removed. The method results in a hybrid wafer comprising a planar top layer formed of the material of the continuous layer with one or more islands embedded therein, the top layer of the islands being formed by the top layer of the active material portion of the one or more tiles.

公开(公告)号：US20220005862A1

公开(公告)日：2022-01-06

申请号：US17366843

申请日：2021-07-02

Applicant: IMEC VZW

Inventor： Yunlong Li ,  Stefano Guerrieri ,  Ming Mao ,  Luis Moreno Hagelsieb

IPC: H01L27/146

Abstract: A method for forming a pixelated optoelectronic stack comprises forming a stacked layer structure that comprises a bottom electrode layer, an optoelectronic layer over the bottom electrode layer, and a patterned hard-mask comprising a pattern over the optoelectronic layer. The method comprises replicating the pattern into the optoelectronic layer and the bottom electrode layer, thereby forming a first intermediate pixelated stack comprising at least two islands of stack separated from one another by stack-free areas; providing an electrically insulating layer on the first intermediate pixelated stack; removing a top portion of the electrically insulating layer and removing any remaining hard-mask so that a top surface of the electrically insulating layer is coplanar with an exposed top surface of the first intermediate pixelated stack, yielding a second intermediate pixelated stack; and forming a top transparent electrode layer over the second intermediate pixelated stack.

公开(公告)号：US20210134886A1

公开(公告)日：2021-05-06

申请号：US17081829

申请日：2020-10-27

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Yunlong Li ,  Epimitheas Georgitzikis ,  David Cheyns

IPC: H01L27/30 ,  H01L51/00 ,  H01L51/42 ,  H01L51/44

Abstract: An aspect comprising an optical sensor is disclosed. The optical sensor comprises stacked layers comprising: a window layer configured to allow the passage of photons; a sensing layer configured to generate charges upon impinging of the photons through the window layer; and a bottom electrode layer comprising at least one bottom electrode for receiving charges generated in the sensing layer. The sensing layer is sandwiched between the window layer and the bottom electrode layer. The at least one bottom electrode of the bottom electrode layer comprises conductive material with reflectivity higher than 0.7 to reflect back received photons into the sensing layer; and the at least one bottom electrode is obtained by semiconductor device fabrication techniques.