公开(公告)号：US20160320336A1

公开(公告)日：2016-11-03

申请号：US15143262

申请日：2016-04-29

Applicant: IMEC VZW

Inventor： Nadine COLLAERT ,  Voon Yew Thean

IPC: G01N27/414 ,  H01L29/423 ,  H01L29/66 ,  H01L21/265

CPC classification number: G01N27/4145 ,  G01N27/414 ,  H01L21/26586 ,  H01L29/42356 ,  H01L29/6653

Abstract: The disclosed technology relates generally to semiconductor devices, and more particularly to semiconductor devices such as field-effect transistor devices configured for biomolecule sensing. In one aspect, a semiconductor chip comprises at least one field-effect transistor device which comprises a source, a drain, a gate stack and a channel region formed between the source and the drain. The gate stack only partially overlaps the channel region at the source side and/or at the drain side, such that a non-overlapped channel region at the source side and/or at the drain side is formed, where the non-overlapped channel region is configured for sensing biomolecules.

Abstract translation: 所公开的技术通常涉及半导体器件，更具体地涉及半导体器件，例如配置用于生物分子感测的场效晶体管器件。 一方面，半导体芯片包括至少一个场效应晶体管器件，其包括源极，漏极，栅极堆叠以及形成在源极和漏极之间的沟道区。 栅极堆叠仅部分地与源极侧和/或漏极侧的沟道区重叠，从而形成源极侧和/或在漏极侧的非重叠沟道区，其中非重叠沟道区 被配置用于感测生物分子。