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公开(公告)号:US20190132541A1
公开(公告)日:2019-05-02
申请号:US16094165
申请日:2017-04-06
Applicant: IMEC VZW
Inventor: Jonathan BORREMANS , Nicolaas TACK , Maarten ROSMEULEN , Paul GOETSCHALCKX , Piet De Moor
CPC classification number: H04N5/37206 , H04N5/347 , H04N5/378
Abstract: An imaging sensor is disclosed, comprising: a set of at least two charge-coupled device, CCD, sub-arrays, wherein each sub-array comprises pixels arranged in columns and rows, and each pixel being arranged to accumulate an electric charge proportional to an intensity of light incident on the pixel; a time delay and integration, TDI, clocking circuitry for controlling and timing transfer of accumulated electric charges between rows of pixels in a column direction in order to integrate the accumulated electric charges in each column of pixels; wherein each CCD sub-array further comprises a readout row for converting the integrated electric charge of each column of pixels into voltage or current, wherein the readout row comprises transistors enabling readout of the signal by the readout block; and a readout block which is arranged to receive input from selected readout rows and convert the input into digital domain or convert the input to a combined representation of pixel values based on the set of CCD sub-arrays.