公开(公告)号：US20220083890A1

公开(公告)日：2022-03-17

申请号：US17474175

申请日：2021-09-14

Applicant: IMEC VZW

Inventor： George Eduard SIMION ,  Fahd Ayyalil MOHIYADDIN ,  Stefan KUBICEK ,  Bogdan GOVOREANU ,  Florin CIUBOTARU ,  Ruoyu LI

IPC: G06N10/00 ,  H01L43/02

Abstract: According to an aspect of the present inventive concept there is provided a qubit device comprising: a semiconductor substrate layer; a set of control gates configured to define a row of electrostatically confined quantum dots along the substrate layer, each quantum dot being suitable for holding a qubit; and a set of nanomagnets arranged in a row over the substrate layer such that a nanomagnet is arranged above every other quantum dot of the row of quantum dots, wherein each nanomagnet has an out-of-plane magnetization with respect to the substrate layer and wherein every other quantum dot is subjected to an out-of-plane magnetic field generated by a respective nanomagnet, such that a qubit spin resonance frequency of every other quantum dot is shifted with respect to an adjacent quantum dot of the row of quantum dots