公开(公告)号：US20230012461A1

公开(公告)日：2023-01-12

申请号：US17811547

申请日：2022-07-08

Applicant: IMEC VZW

Inventor： Hanns Christoph ADELMANN ,  Florin CIUBOTARU

IPC: H01L41/12 ,  H01L41/20 ,  H01L41/047

Abstract: A magnetoelectric (“ME”) device is disclosed. In one aspect, the ME device includes a first piezoelectric substrate portion and a second piezoelectric substrate portion; a magnetostrictive body with a magnetization oriented in a first direction, the magnetostrictive body arranged on and extending between the first and second portions; a pair of input electrodes arranged on the first portion; and a pair of output electrodes arranged on the second portion. The input electrodes are configured to induce a fringing electric field extending between the input electrodes via the first portion, thereby causing a deformation of the first portion which in turn causes a deformation of the magnetostrictive body such that the magnetization thereof is re-oriented to a second direction due to a reverse magnetostriction. An output voltage is induced between the output electrodes by a deformation of the second portion caused by the re-orientation of the magnetization of the magnetostrictive body.

公开(公告)号：US20210111473A1

公开(公告)日：2021-04-15

申请号：US17055546

申请日：2019-05-14

Applicant: IMEC VZW

Inventor： Hanns Christoph ADELMANN ,  Florin CIUBOTARU ,  Xavier ROTTENBERG ,  Hendrikus TILMANS ,  Bruno FIGEYS

IPC: H01P7/08

Abstract: A resonator for spin waves, wherein the resonator comprises a stack of material layers arranged on a substrate, a waveguide structure formed in at least one material layer in the stack and configured to propagate a spin wave and to confine a spin wave propagating in a waveguide element of the waveguide structure, such that a spin wave of a selected frequency propagating in the waveguide structure is arranged to resonate in the waveguide structure. The resonator further comprises a control mechanism formed in at least one material layer in the stack and configured to adapt at least one property of the waveguide structure for tuning the resonance frequency of the waveguide structure.

公开(公告)号：US20220083890A1

公开(公告)日：2022-03-17

申请号：US17474175

申请日：2021-09-14

Applicant: IMEC VZW

Inventor： George Eduard SIMION ,  Fahd Ayyalil MOHIYADDIN ,  Stefan KUBICEK ,  Bogdan GOVOREANU ,  Florin CIUBOTARU ,  Ruoyu LI

IPC: G06N10/00 ,  H01L43/02

Abstract: According to an aspect of the present inventive concept there is provided a qubit device comprising: a semiconductor substrate layer; a set of control gates configured to define a row of electrostatically confined quantum dots along the substrate layer, each quantum dot being suitable for holding a qubit; and a set of nanomagnets arranged in a row over the substrate layer such that a nanomagnet is arranged above every other quantum dot of the row of quantum dots, wherein each nanomagnet has an out-of-plane magnetization with respect to the substrate layer and wherein every other quantum dot is subjected to an out-of-plane magnetic field generated by a respective nanomagnet, such that a qubit spin resonance frequency of every other quantum dot is shifted with respect to an adjacent quantum dot of the row of quantum dots