公开(公告)号：US12264972B2

公开(公告)日：2025-04-01

申请号：US18201996

申请日：2023-05-25

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Yu-Wen Hsu ,  Lu-Pu Liao ,  Chao-Ta Huang ,  Bo-Kai Chao

IPC: G01J5/20 ,  H10N19/00

Abstract: A vertically integrated micro-bolometer includes an integrated circuit chip, an infrared sensing film, and a metal bonding layer. The integrated circuit chip includes a silicon substrate, a circuit element, and a dielectric layer disposed on the silicon substrate. The infrared sensing film includes a top absorbing layer, a sensing layer, and a bottom absorbing layer. The sensing layer is disposed between the top absorbing layer and the bottom absorbing layer. Materials of the top absorbing layer, the sensing layer, and the bottom absorbing layer are materials compatible with a semiconductor manufacturing process. The metal bonding layer connects the dielectric layer on the silicon substrate in the integrated circuit chip and the bottom absorbing layer of the infrared sensing film to form a vertically integrated micro-bolometer. In one embodiment, the infrared sensing film is divided into a central sensing film, a surrounding sensing film, and a plurality of connecting portions by a plurality of slots. The surrounding sensing film surrounds the central sensing film. Each of the connecting portions connects the surrounding sensing film and the central sensing film. A central distance from the bottom absorbing layer of the central sensing film to the silicon substrate is substantially equal to a surrounding distance from the bottom absorbing layer of the surrounding sensing film to the silicon substrate.