公开(公告)号：US20210161006A1

公开(公告)日：2021-05-27

申请号：US16721509

申请日：2019-12-19

申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

发明人： Kai-Hsiang CHUANG ,  Chien-Chiang HSU ,  Chien-Chung HSU ,  Kuo-Chuang CHIU

IPC分类号： H05K1/03 ,  C04B37/02

摘要： A direct bonded copper ceramic substrate is provided, which includes a nitride ceramic substrate, a first passivation layer, and a first copper layer. The first passivation layer includes aluminum oxide or silicon oxide doped with another metal. The other metal is titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, or a combination thereof. The aluminum or silicon and the other metal have a weight ratio of 60:40 to 99.5:0.5. The first passivation layer is disposed between the top surface of the nitride ceramic substrate and the first copper layer.