DIRECT BONDED COPPER CERAMIC SUBSTRATE

    公开(公告)号:US20210161006A1

    公开(公告)日:2021-05-27

    申请号:US16721509

    申请日:2019-12-19

    IPC分类号: H05K1/03 C04B37/02

    摘要: A direct bonded copper ceramic substrate is provided, which includes a nitride ceramic substrate, a first passivation layer, and a first copper layer. The first passivation layer includes aluminum oxide or silicon oxide doped with another metal. The other metal is titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, or a combination thereof. The aluminum or silicon and the other metal have a weight ratio of 60:40 to 99.5:0.5. The first passivation layer is disposed between the top surface of the nitride ceramic substrate and the first copper layer.