公开(公告)号：US20210242304A1

公开(公告)日：2021-08-05

申请号：US16842589

申请日：2020-04-07

Applicant: Industrial Technology Research Institute

Inventor： Yu-De LIN ,  Heng-Yuan LEE ,  Po-Chun YEH ,  Chih-Yao WANG ,  Hsin-Yun YANG

IPC: H01L49/02

Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a substrate, a first conductive layer disposed on the substrate, a patterned oxide layer disposed on the first conductive layer and the substrate, exposing a part of the first conductive layer, a second conductive layer disposed on the exposed first conductive layer and the patterned oxide layer, an antiferroelectric layer disposed on the exposed first conductive layer and the second conductive layer, a ferroelectric layer disposed on the second conductive layer and located on the antiferroelectric layer, a conductive oxide layer disposed between the antiferroelectric layer, and a third conductive layer disposed on the conductive oxide layer and between the ferroelectric layer.

公开(公告)号：US20210174855A1

公开(公告)日：2021-06-10

申请号：US16907101

申请日：2020-06-19

Applicant: Industrial Technology Research Institute

Inventor： Yu-De LIN ,  Heng-Yuan LEE ,  Po-Chun YEH ,  Hsin-Yun YANG

IPC: G11C11/22

Abstract: A ferroelectric memory is provided. The ferroelectric memory includes a first electrode layer having a dominant crystallographic orientation of (110) or (220), a second electrode layer opposite the first electrode layer, wherein the second electrode layer has a dominant crystallographic orientation of (110) or (220), and a ferroelectric layer disposed between the first electrode layer and the second electrode layer, wherein the ferroelectric layer has a dominant crystallographic orientation of (111).

公开(公告)号：US20150280122A1

公开(公告)日：2015-10-01

申请号：US14735063

申请日：2015-06-09

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Heng-Yuan LEE ,  Pang-Shiu CHEN ,  Tai-Yuan WU ,  Ching-Chiun WANG

IPC: H01L45/00

CPC classification number: H01L45/1641 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1658

Abstract: A resistive random access memory and a method for fabricating the same are provided. The method includes providing a structure comprising a substrate, a bottom electrode disposed on the substrate, a metal oxide layer disposed on the bottom electrode, and an oxygen atom gettering layer disposed on the metal oxide layer; and subjecting the structure to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.

Abstract translation: 提供了一种电阻随机存取存储器及其制造方法。 该方法包括提供包括基板，设置在基板上的底部电极，设置在底部电极上的金属氧化物层和设置在金属氧化物层上的氧原子吸气层的结构; 并对所述结构进行热处理，驱动所述金属氧化物层的氧原子迁移到所述氧原子吸气层中并与所述氧原子吸气层反应，从而在所述金属氧化物层内形成多个氧空位。