公开(公告)号：US20140080313A1

公开(公告)日：2014-03-20

申请号：US13725419

申请日：2012-12-21

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Sheng-Min YU ,  Wen-Ching SUN ,  Tai-Jui WANG ,  Yi-Fan CHEN ,  Chia-Liang SUN ,  Hao-Hsiang CHIANG ,  Pin-Guan LIAO ,  Chi-Fan CHIANG ,  Tzer-Shen LIN

IPC: H01L21/306

CPC classification number: H01L21/30604 ,  H01L31/02363 ,  Y02E10/50

Abstract: An etching composition for a semiconductor wafer is provided, including 0.5-50 wt % base, 10-80 wt % alcohol, 0.01-15 wt % additive and water. A method for etching a semiconductor wafer is also provided. When the etching composition is applied to the entire surface or a partial surface of the semiconductor wafer at 60-200° C., the etching composition reacts on the semiconductor wafer to form a foam that etches the semiconductor wafer and includes a solid, a liquid and a gas. At the same time, the additive forms an oxide mask on the surface of the semiconductor wafer. Therefore, an excellent texture structure is formed on the surface of the semiconductor wafer, and a single surface of the semiconductor wafer is etched.

Abstract translation: 提供了一种用于半导体晶片的蚀刻组合物，其包括0.5-50重量％的碱，10-80重量％的醇，0.01-15重量％的添加剂和水。 还提供了蚀刻半导体晶片的方法。 当在60-200℃下将蚀刻组合物施加到半导体晶片的整个表面或部分表面时，蚀刻组合物在半导体晶片上反应形成蚀刻半导体晶片的泡沫，并且包括固体，液体 和气体。 同时，添加剂在半导体晶片的表面形成氧化物掩模。 因此，在半导体晶片的表面上形成优良的纹理结构，并且蚀刻半导体晶片的单个表面。