公开(公告)号：US20180190845A1

公开(公告)日：2018-07-05

申请号：US15394816

申请日：2016-12-30

Applicant: Industrial Technology Research Institute

Inventor： Lung-Teng Cheng ,  Yu-Yun Wang ,  Tung-Po Hsieh

IPC: H01L31/032 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/072 ,  H01L31/18

CPC classification number: H01L31/0322 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02614 ,  H01L21/02628 ,  H01L31/0323 ,  H01L31/0749 ,  Y02E10/50 ,  Y02P70/521

Abstract: A compound-based solar cell including a first electrode, a second electrode, a first type doped semiconductor layer and a second type doped semiconductor layer is provided. The first type doped semiconductor layer is disposed between the first electrode and the second electrode, and the second type doped semiconductor layer is disposed between the first type doped semiconductor layer and the second electrode. The first type doped semiconductor layer has a first side adjacent to the first electrode and a second side adjacent to the second type doped semiconductor layer. The first type doped semiconductor layer includes at least one of a plurality of elements, and the elements include potassium, rubidium and cesium. The concentration of at least one of the elements on the first side is higher than the concentration on the second side. Besides, a manufacturing method of a light absorption layer is also provided.

公开(公告)号：US20140179048A1

公开(公告)日：2014-06-26

申请号：US13908256

申请日：2013-06-03

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Tzung-Shin Wu ,  Shih-Hsiung Wu ,  Yu-Yun Wang ,  Hung-Ru Hsu ,  Ho-Min Chen

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L31/0326 ,  Y02E10/50 ,  Y02P70/521

Abstract: A method for preparing an absorbing layer of a solar cell includes the following steps. An absorbing layer precursor containing at least one group XIV element is loaded on a substrate. A solid vapor source containing a group XIV element, the same as the group XIV element in the absorbing layer precursor is provided. The solid vapor source corresponds to the absorbing layer precursor. The solid vapor source and the absorbing layer precursor are kept apart by a distance. A heating process is performed so that the absorbing layer precursor forms an absorbing layer, the solid vapor source is vaporized and generates a gas containing the group XIV element, and the gas containing the group XIV element inhibits the effusion of the group XIV element of the absorbing layer precursor so that the proportion of the group XIV element in the formed absorbing layer is consistent.

Abstract translation: 制备太阳能电池吸收层的方法包括以下步骤。 将含有至少一种XIV族基团的吸收层前体加载到基底上。 提供了含有与吸收层前体中的第XIV族元素相同的基团XIV元素的固体蒸气源。 固体蒸汽源对应于吸收层前体。 固体蒸汽源和吸收层前体保持分开一段距离。 进行加热处理，使得吸收层前体形成吸收层，固体蒸气源蒸发并产生含有第XIV族元素的气体，并且含有第ⅩⅣ族元素的气体抑制第XIV族元素的渗出 吸收层前体，使得所形成的吸收层中的基团XIV元素的比例是一致的。