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公开(公告)号:US20190123232A1
公开(公告)日:2019-04-25
申请号:US16126658
申请日:2018-09-10
IPC分类号: H01L31/18 , C23C16/52 , C23C16/46 , C23C16/455 , C23C14/24 , H01L31/032 , C23C14/06
CPC分类号: H01L31/18 , C23C14/0629 , C23C14/24 , C23C16/455 , C23C16/46 , C23C16/52 , H01L31/0322 , H01L31/0324 , H01L31/0326 , Y02E10/541 , Y02P70/521
摘要: Techniques for precisely controlling the composition of volatile components (such as sulfur (S), selenium (Se), and tin (Sn)) of chalcogenide semiconductors in real-time—during production of the material are provided. In one aspect, a method for forming a chalcogenide semiconductor material includes providing a S source(s) and a Se source(s); heating the S source(s) to form a S-containing vapor; heating the Se source(s) to form a Se-containing vapor; passing a carrier gas first through the S-containing vapor and then through the Se-containing vapor, wherein the S-containing vapor and the Se-containing vapor are transported via the carrier gas to a sample; and contacting the S-containing vapor and the Se-containing vapor with the sample under conditions sufficient to form the chalcogenide semiconductor material. A multi-chamber processing apparatus is also provided.
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公开(公告)号:US20180245209A1
公开(公告)日:2018-08-30
申请号:US15904647
申请日:2018-02-26
申请人: SIVA POWER, INC.
IPC分类号: C23C14/26 , H01L51/56 , H01L31/046 , H01L31/18 , H01L31/032 , H01L51/00 , C23C14/24 , F28D15/00 , F25D17/02 , F25B39/00 , C23C16/52 , C23C16/448 , C23C16/28 , C23C16/02 , C23C14/54 , F25B39/02 , H01L21/02
CPC分类号: C23C14/26 , C23C14/24 , C23C14/243 , C23C14/542 , C23C16/0209 , C23C16/28 , C23C16/448 , C23C16/4485 , C23C16/52 , F25B39/00 , F25B39/02 , F25D17/02 , F28D15/00 , H01L21/02568 , H01L21/02631 , H01L31/0322 , H01L31/0326 , H01L31/046 , H01L31/18 , H01L51/001 , H01L51/56 , Y02E10/541
摘要: In various embodiments, evaporation sources for deposition systems are heated and/or cooled via a fluid-based thermal management system.
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公开(公告)号:US20180069146A1
公开(公告)日:2018-03-08
申请号:US15255929
申请日:2016-09-02
发明人: Teodor K. Todorov
CPC分类号: C01B19/007 , C01P2002/72 , C01P2004/03 , C04B35/547 , C04B35/62222 , C04B2235/3281 , C04B2235/3284 , C04B2235/3293 , C04B2235/662 , H01L21/02491 , H01L21/02557 , H01L21/0256 , H01L21/02568 , H01L21/02667 , H01L31/0326
摘要: Techniques for minimizing loss of volatile components during thermal processing of kesterite films are provided. In one aspect, a method for annealing a kesterite film is provided. The method includes: placing a cover over the kesterite film; and annealing the cover and the kesterite film such that, for an entire duration of the annealing, the cover is at a temperature T1 and the kesterite film is at a temperature T2, wherein the temperature T1 is greater than or equal to the temperature T2. Optionally, during a cool down segment of the annealing, conditions can be reversed to have the temperature T1 be less than the temperature T2. A solar cell and method for formation thereof using the present annealing techniques are also provided.
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公开(公告)号:US09911935B2
公开(公告)日:2018-03-06
申请号:US14846119
申请日:2015-09-04
发明人: Bruce A. Ek , Talia S. Gershon , Supratik Guha , Oki Gunawan , Teodor K. Todorov
IPC分类号: H01L51/44 , H01L51/00 , H01L31/032 , H01L31/0725 , H01L51/42
CPC分类号: H01L51/442 , H01L31/0326 , H01L31/0725 , H01L51/0021 , H01L51/4213 , Y02E10/549
摘要: Techniques for forming a transparent conducting oxide (TCO) top contact using a low temperature process are provided. In one aspect of the invention, a method of forming a TCO on a substrate is provided. The method includes the steps of: generating a source gas of the TCO using e-beam evaporation; generating atomic oxygen using RF plasma; and contacting the substrate with the TCO source gas and the atomic oxygen under conditions sufficient to form the TCO on the substrate. A photovoltaic device is also provided which includes a bottom cell; and a perovskite-based top cell on the kesterite-based bottom cell. The perovskite-based top cell includes a top electrode formed from a TCO.
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公开(公告)号:US20180006179A1
公开(公告)日:2018-01-04
申请号:US15198204
申请日:2016-06-30
IPC分类号: H01L31/061 , H01L31/18 , H01L31/0296 , H01L31/028 , H01L31/0224 , H01L31/032 , H01L31/0445 , H01L31/0256
CPC分类号: H01L31/061 , H01L31/022433 , H01L31/022441 , H01L31/028 , H01L31/0296 , H01L31/0322 , H01L31/0326 , H01L31/035281 , H01L31/0392 , H01L31/0445 , H01L31/1868 , H01L2031/0344
摘要: Methods are provided for fabricating photovoltaic cell contacts, which include: providing a block copolymer layer above an electrical contact layer of the photovoltaic cell, the block copolymer layer being self-assembled by phase segregation to include multiple structures of a first polymer material surrounded, at least in part, by a second polymer material; selectively etching the block copolymer layer to remove the multiple structures, forming holes in the block copolymer layer; and using the holes in the block copolymer layer to facilitate providing electrical contacts between a light absorption layer of the photovoltaic cell and the electrical contact layer. For instance, the holes in the copolymer layer may be used in etching a passivation layer over the electrical contact layer to form nano-sized contact openings in the passivation layer to the contact layer. Once provided, the cell's light absorption material forms contacts extending through the contact openings in the passivation layer.
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公开(公告)号:US20170306169A1
公开(公告)日:2017-10-26
申请号:US15511189
申请日:2015-10-27
IPC分类号: C09D5/32 , H01L31/0749 , H01L31/0224 , C01G15/00 , C09D7/00 , C09D5/24 , C09D1/00 , H01L31/18 , H01L31/032
CPC分类号: C09D5/32 , C01B19/007 , C01G15/006 , C09D1/00 , C09D5/24 , C09D7/20 , H01L21/02568 , H01L21/02628 , H01L31/022425 , H01L31/0322 , H01L31/0326 , H01L31/0749 , H01L31/18 , H01L31/1864 , Y02E10/541
摘要: A homogeneous coating solution for forming a light-absorbing layer of a solar cell, the homogeneous solution including: at least one metal or metal compound selected from the group consisting of a group 11 metal, a group 13 metal, a group 11 metal compound and a group 13 metal compound; a Lewis base solvent; and a Lewis acid.
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公开(公告)号:US20170278994A1
公开(公告)日:2017-09-28
申请号:US15077996
申请日:2016-03-23
发明人: Richard A. Haight
IPC分类号: H01L31/054
CPC分类号: H01L31/02013 , H01L31/02 , H01L31/02168 , H01L31/022475 , H01L31/022483 , H01L31/0322 , H01L31/0326 , H01L31/055 , H01L31/072 , H01L31/0749 , Y02E10/52 , Y02E10/541
摘要: A method of fabricating a color tunable thin film photovoltaic device includes depositing a layer of a semiconducting compound configured to exhibit a photovoltaic effect, and depositing a buffer layer over the layer of the semiconducting compound. Depositing transparent conducting oxides (TCO) over the buffer layer is followed by selecting two or more layers of optically transparent materials such that constructive interference among wavelengths reflected by the buffer layer, the TCO, and the two or more layers results in a desired exhibited color and depositing the two or more layers of the optically transparent materials above the TCO.
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公开(公告)号:US09768333B2
公开(公告)日:2017-09-19
申请号:US14246632
申请日:2014-04-07
申请人: UT-Battelle, LLC
发明人: Tommy J. Phelps , Robert J. Lauf , Ji-Won Moon , Adam Justin Rondinone , Lonnie J. Love , Chad Edward Duty , Andrew Stephen Madden , Yiliang Li , Ilia N. Ivanov , Claudia Jeanette Rawn
IPC分类号: C12P3/00 , H01L31/032 , C01B17/20 , C01B19/00 , C01G9/08 , C01G11/02 , C01G15/00 , C01G19/00 , H01L31/0352
CPC分类号: H01L31/0326 , C01B17/20 , C01B19/007 , C01G9/08 , C01G11/02 , C01G15/006 , C01G19/006 , C01P2002/72 , C01P2002/82 , C01P2002/84 , C01P2004/04 , C01P2006/40 , C12P3/00 , H01L31/035218 , Y10T428/2982
摘要: The invention is directed to a method for producing non-oxide semiconductor nanoparticles, the method comprising: (a) subjecting a combination of reaction components to conditions conducive to microbially-mediated formation of non-oxide semiconductor nanoparticles, wherein said combination of reaction components comprises i) anaerobic microbes, ii) a culture medium suitable for sustaining said anaerobic microbes, iii) a metal component comprising at least one type of metal ion, iv) a non-metal component comprising at least one non-metal selected from the group consisting of S, Se, Te, and As, and v) one or more electron donors that provide donatable electrons to said anaerobic microbes during consumption of the electron donor by said anaerobic microbes; and (b) isolating said non-oxide semiconductor nanoparticles, which contain at least one of said metal ions and at least one of said non-metals. The invention is also directed to non-oxide semiconductor nanoparticle compositions produced as above and having distinctive properties.
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公开(公告)号:US09722113B2
公开(公告)日:2017-08-01
申请号:US14807378
申请日:2015-07-23
发明人: Vladimir A. Stoica , Lynn Endicott , Roy Clarke , Ctirad Uher
IPC分类号: H01L31/032 , H01L31/18 , H01L33/00 , H01L33/12 , H01L31/0352 , H01L33/26 , H01L31/0725 , H01L21/66
CPC分类号: H01L31/0322 , H01L21/02439 , H01L21/02444 , H01L21/02483 , H01L21/02485 , H01L21/02502 , H01L21/02551 , H01L21/02568 , H01L21/02631 , H01L22/12 , H01L31/032 , H01L31/0326 , H01L31/035272 , H01L31/0392 , H01L31/072 , H01L31/0725 , H01L31/18 , H01L31/1864 , H01L33/005 , H01L33/12 , H01L33/26 , Y02E10/541
摘要: A multilayer stack including a substrate, an active layer, and a tetradymite buffer layer positioned between the substrate and the active layer is disclosed. A method for fabricating a multilayer stack including a substrate, a tetradymite buffer layer and an active layer is also disclosed. Use of such stacks may be in photovoltaics, solar cells, light emitting diodes, and night vision arrays, among other applications.
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公开(公告)号:US09716207B2
公开(公告)日:2017-07-25
申请号:US13948645
申请日:2013-07-23
申请人: GLOBALFOUNDRIES INC.
发明人: Keith E. Fogel , Jeehwan Kim , David B. Mitzi , Mark T. Winkler
IPC分类号: H01L21/00 , H01L31/18 , H01L31/0224 , H01L31/0236 , H01L31/032 , H01L31/0749
CPC分类号: H01L31/1888 , H01L31/022483 , H01L31/02366 , H01L31/0326 , H01L31/0749 , Y02E10/541
摘要: A method for forming a photovoltaic device includes forming a photovoltaic absorption stack on a substrate including one or more of I-III-VI2 and I2-II-IV-VI4 semiconductor material. A transparent conductive contact layer is deposited on the photovoltaic absorption stack at a temperature less than 200 degrees Celsius. The transparent conductive contact layer has a thickness of about one micron and is formed on a front light-receiving surface. The surface includes pyramidal structures due to an as deposited thickness. The transparent conductive contact layer is wet etched to further roughen the front light-receiving surface to reduce reflectance.
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