公开(公告)号：US20230031789A1

公开(公告)日：2023-02-02

申请号：US17419710

申请日：2021-04-16

Applicant: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.

Inventor： Yanbo ZOU ,  Fada DU ,  Wenbin XIE ,  Chao TANG

IPC: H03K17/687 ,  H02M1/00 ,  H02M1/08

Abstract: The present disclosure provides a controller for controlling a GaN-based semiconductor device. The controller is configured to receive a current sensing signal VCS which is indicative of a drain-to-source current of the GaN-based semiconductor device and generate a control driving signal VDRV to the GaN-based semiconductor device such that a gate-to-source voltage VGS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to a reference voltage Vref over an on-time duration. Impact of the change in the voltage drop across the current sensing resistor to the operation of the GaN-based semiconductor device is eliminated.