HIGH EFFICIENCY AND HIGH DENSITY GaN-BASED POWER CONVERTER

    公开(公告)号:US20220255447A1

    公开(公告)日:2022-08-11

    申请号:US17376129

    申请日:2021-07-14

    Abstract: The present invention provides a high efficiency, high density GaN-based power converter comprising: a transformer; a magnetic coupler; a primary switch; a secondary switch; a primary controller; a secondary controller; a multi-layered print circuit board (PCB) comprising: one or more planar coils respectively formed on one or more PCB layers and aligned with each other for constructing the transformer and the coupler; and a plurality of conducting traces and vias for providing electrical connection among the transformer, the coupler, a primary switch, a secondary switch, a primary controller and a secondary controller. The power converter further comprises a pair of ferrite cores being fixed to a top surface and a bottom surface of the PCB respectively and commonly shared by the transformer and the coupler.

    HIGH EFFICIENCY AND HIGH DENSITY GaN-BASED POWER CONVERTER

    公开(公告)号:US20220255446A1

    公开(公告)日:2022-08-11

    申请号:US17376102

    申请日:2021-07-14

    Abstract: The present invention provides a high efficiency, high density GaN-based power converter comprising: a transformer; a magnetic coupler; a primary switch; a secondary switch; a primary controller; a secondary controller; a multi-layered print circuit board (PCB) comprising: one or more planar coils respectively formed on one or more PCB layers and aligned with each other for constructing the transformer and the coupler; and a plurality of conducting traces and vias for providing electrical connection among the transformer, the coupler, a primary switch, a secondary switch, a primary controller and a secondary controller. The power converter further comprises a pair of ferrite cores being fixed to a top surface and a bottom surface of the PCB respectively and commonly shared by the transformer and the coupler.

    CONTROLLER FOR CONTROLLING A GaN-BASED DEVICE AND METHOD FOR IMPLEMENTING THE SAME

    公开(公告)号:US20230031789A1

    公开(公告)日:2023-02-02

    申请号:US17419710

    申请日:2021-04-16

    Abstract: The present disclosure provides a controller for controlling a GaN-based semiconductor device. The controller is configured to receive a current sensing signal VCS which is indicative of a drain-to-source current of the GaN-based semiconductor device and generate a control driving signal VDRV to the GaN-based semiconductor device such that a gate-to-source voltage VGS applied to the GaN-based semiconductor device for switching on the GaN-based semiconductor device is stabilized to a voltage value equal to a reference voltage Vref over an on-time duration. Impact of the change in the voltage drop across the current sensing resistor to the operation of the GaN-based semiconductor device is eliminated.

    POWER CONVERTER WITH LOSSLESS CURRENT SENSING CAPABILITY AND METHOD FOR IMPLEMENTING THE SAME

    公开(公告)号:US20220329165A1

    公开(公告)日:2022-10-13

    申请号:US17429358

    申请日:2021-04-12

    Abstract: The subject application provides a power converter with lossless current sensing capability. The power converter comprises: a transformer, a primary switch for conducting or blocking a current flowing in a primary winding of the transformer, a controller configured to generate a first control signal through a first control node to control the primary switch; and a current sensing circuit configured for sensing a current flowing in the primary winding. The current sensing circuit comprises a current sensing switch that is configured to be normally open and has a gate length smaller than a gate length of the primary switch. A relatively simple current sensing circuit is achieved and the overall power efficiency is improved.

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