公开(公告)号：US20200212651A1

公开(公告)日：2020-07-02

申请号：US16818801

申请日：2020-03-13

Applicant: INPHI CORPORATION

Inventor： Radhakrishnan L. NAGARAJAN ,  Masaki KATO ,  Nourhan EID ,  Kenneth Ling WONG

IPC: H01S5/0687 ,  H01S5/10 ,  H01S5/14 ,  H01S5/40 ,  H01S5/022 ,  H01S5/343 ,  H01S5/02 ,  H01S5/026 ,  H01S5/028 ,  H01S5/06

Abstract: A tunable laser device based on silicon photonics includes a substrate configured with a patterned region comprising one or more vertical stoppers, an edge stopper facing a first direction, a first alignment feature structure formed in the patterned region along the first direction, and a bond pad disposed between the vertical stoppers. Additionally, the tunable laser includes an integrated coupler built in the substrate located at the edge stopper and a laser diode chip including a gain region covered by a P-type electrode and a second alignment feature structure formed beyond the P-type electrode. The laser diode chip is flipped to rest against the one or more vertical stoppers with the P-type electrode attached to the bond pad and the gain region coupled to the integrated coupler. Moreover, the tunable laser includes a tuning filter fabricated in the substrate and coupled via a wire waveguide to the integrated coupler.