PASSIVELY VARIABLE EMITTANCE DEVICE AND METHOD FOR MAKING THE SAME
    1.
    发明申请
    PASSIVELY VARIABLE EMITTANCE DEVICE AND METHOD FOR MAKING THE SAME 有权
    非常可变的发射装置及其制造方法

    公开(公告)号:US20140139904A1

    公开(公告)日:2014-05-22

    申请号:US14084167

    申请日:2013-11-19

    IPC分类号: G02F1/01

    摘要: There is described a passive variable emittance device comprising: a substrate having a receiving surface adapted to reflect radiations having a given wavelength; an intermediary layer deposited on the receiving surface of the substrate and being substantially transparent to the radiations having the given wavelength; and a thermochromic layer deposited on top of the intermediary layer, the thermochromic layer being substantially transparent to the radiations having the given wavelength for a first temperature below a given transition temperature, and presenting both reflection and absorption for the radiations for a second temperature above the given transition temperature, a total optical thickness for the intermediary and thermochromic layers being substantially equal to one quarter of the given wavelength so that radiations reflected by the thermochromic layer at the second temperature destructively interfere with radiations transmitted by the thermochromic and intermediary layers and reflected by the substrate in order to obtain a first emittance for the passive variable emittance device at the second temperature being greater than a second emittance for the passive variable emittance device at the first temperature.

    摘要翻译: 描述了一种无源可变发射装置,包括:具有适于反射具有给定波长的辐射的接收表面的基板; 沉积在衬底的接收表面上并对具有给定波长的辐射基本透明的中间层; 并且沉积在中间层顶部的热致变色层,热变色层对于具有给定波长的辐射基本上对于具有低于给定转变温度的第一温度的辐射,并且对于第二温度的辐射呈现反射和吸收,第二温度高于 给定的转变温度,中间和热变色层的总光学厚度基本上等于给定波长的四分之一,使得在第二温度下由热致变色层反射的辐射破坏性地干扰由热变色和中间层传输的辐射,并由 为了获得在第二温度下的被动可变发射装置的第一发射率大于第一温度下的被动可变发射装置的第二发射率的衬底。

    SELF-ORGANIZED SOLID-STATE SYNTHETIC NEURONAL STRUCTURE

    公开(公告)号:US20170098155A1

    公开(公告)日:2017-04-06

    申请号:US15281174

    申请日:2016-09-30

    IPC分类号: G06N3/063 G06N3/04

    CPC分类号: G06N3/0635 G06N3/04 G06N3/049

    摘要: A synthetic neuronal structure makes use of a semiconductor-metal phase transition material having material regions separated by discontinuities. The discontinuities represent interfaces such that different phases in two adjacent regions result in a metal-semiconductor interface. The interface supports a charge accumulation and a discharge of accumulated charge when an activation energy provided, for example, by electrical current, localized heating or optical energy, reaches a threshold necessary for breakdown of a potential barrier presented by the interface, and thus mimics a leaky integrate-and-fire neuron. With many such interfaces distributed through the structure, the local inputs to a neuron become a weighted sum of energy from neighboring neurons. Thus, different combinations of signals at one or more inputs connected to the structure will favor different neural pathways through the structure, thereby resulting in a neural network.