公开(公告)号：US20180299335A1

公开(公告)日：2018-10-18

申请号：US15753147

申请日：2016-07-08

Applicant: INSTITUTE OF CEOLOGY AND GEOPHYSICS, CHINESE ACADEMY OF SCIENCES

Inventor： Man WONG ,  Kevin CHAU

IPC: G01L1/18 ,  G01B7/16 ,  B81B7/02 ,  B81C1/00

CPC classification number: G01L1/18 ,  B81B7/02 ,  B81B2201/0292 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00547 ,  B81C2201/0132 ,  B81C2201/0133 ,  B81C2201/0176 ,  G01B7/18 ,  G01B7/20 ,  G01L1/26

Abstract: The present invention is related to a sensor. In particular, the present invention is related to a MEMS strain gauge die and its fabrication process. The MEMS strain gauge die comprises a handle, a device layer and a cap all connected together. A silicon oxide layer is formed between the handle and the device layer. Another silicon oxide layer is formed between the device layer and the cap. Recesses are respectively formed on the handle and the cap and face each other. The handle recess and the cap recess are connected to form a cavity. The device layer, which spans the cavity, further comprises a bridge on which a plurality of piezoresistive sensing elements are formed. The present strain gauge die is more immune to temperature effects. It is especially suitable for operating in a high temperature environment and is capable of delivering accurate and reliable strain measurements at low cost.