公开(公告)号：US20240184217A1

公开(公告)日：2024-06-06

申请号：US17784064

申请日：2021-12-29

申请人： INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

发明人： Jian Xu ,  Yayi Wei ,  Shang Yang

IPC分类号： G03F7/00

CPC分类号： G03F7/70558 ,  G03F7/70391 ,  G03F7/70516

摘要： A method and an apparatus for correcting a proximity effect of an electron beam. An initial dose of the electron beam is preset for each exposed square, and proximity effect energy representing an influence of exposing all exposed squares other than a current exposed square on the current exposed is calculated. A corrected dose of the electron beam for the current exposed square is then calculated, and the corrected dose for each exposed square in the electron beam exposure layout matrix is successively calculated. Then, the above calculation iterates for T times to obtain a final corrected dose of the electron beam for each exposed square.