摘要:
Light source calibration methods and systems employed in source mask optimization are provided. The method includes: initializing a light source pattern and a mask pattern; using an SMO algorithm to iteratively optimize the light source pattern and the mask pattern; using a pre-established light source error correction model to correct the light source pattern after each iterative optimization, and updating the light source pattern after each iterative optimization with a corrected light source pattern in a current iteration process. The light source error correction model is established according to an input and output data set consisting of an input target light source pattern and an output actual light source pattern of a PIS. The method includes determining, according to an evaluation criterion or a condition of convergence of iteration of the SMO algorithm, whether the optimization meets a requirement.
摘要:
Methods and associated apparatus for identifying contamination in a semiconductor fab. The methods include determining contamination map data for a plurality of semiconductor wafers clamped to a wafer table after being processed in the semiconductor fab. Combined contamination map data is determined based, at least in part, on a combination of the contamination map data of the plurality of semiconductor wafers. The combined contamination map data is combined to reference data. The reference data include one or more values for the combined contamination map data that are indicative of contamination in one or more tools in the semiconductor fab.
摘要:
Methods and systems for performing overlay and edge placement errors based on Soft X-Ray (SXR) scatterometry measurement data are presented herein. Short wavelength SXR radiation focused over a small illumination spot size enables measurement of design rule targets or in-die active device structures. In some embodiments, SXR scatterometry measurements are performed with SXR radiation having energy in a range from 10 to 5,000 electronvolts. As a result, measurements at SXR wavelengths permit target design at process design rules that closely represents actual device overlay. In some embodiments, SXR scatterometry measurements of overlay and shape parameters are performed simultaneously from the same metrology target to enable accurate measurement of Edge Placement Errors. In another aspect, overlay of aperiodic device structures is estimated based on SXR measurements of design rule targets by calibrating the SXR measurements to reference measurements of the actual device target.
摘要:
A lithographic apparatus includes a patterning device support to support a patterning device, the patterning device system including a moveable structure movably arranged relative to an object, a patterning device holder movably arranged relative to the movable structure to hold the patterning device, an actuator to move the movable structure relative to the object, and an ultra short stroke actuator to move the patterning device holder with respect to the movable structure; a substrate support to hold a substrate; a projection system to project a patterned radiation beam onto a target portion of the substrate; a transmission image sensor for measuring a position of the patterned radiation beam downstream of the projection system; and a calibrator for determining a relationship between magnitude of an applied control signal to the ultra short stroke actuator and resulting change in position of the patterned radiation beam and/or patterning device holder and/or patterning device.
摘要:
An overlay measurement (OV) is based on asymmetry in a diffraction spectrum of target structures formed by a lithographic process. Stack difference between target structures can be perceived as grating imbalance (GI), and the accuracy of the overlay measurement may be degraded. A method of predicting GI sensitivity is performed using first and second images (45+, 45−) of the target structure using opposite diffraction orders. Regions (ROI) of the same images are used to measure overlay. Multiple local measurements of symmetry (S) and asymmetry (A) of intensity between the opposite diffraction orders are made, each local measurement of symmetry and asymmetry corresponding to a particular location on the target structure. Based on a statistical analysis of the local measurements of symmetry and asymmetry values, a prediction of sensitivity to grating imbalance is obtained. This can be used to select better measurement recipes, and/or to correct errors caused by grating imbalance.
摘要:
An apparatus includes a material having an optical transition profile with a known energy transition; and a detector configured to detect a characteristic associated with the interaction between the material and the testing light beam. The testing light beam is either a primary light beam produced by an optical source or a calibration light beam. The apparatus also includes a spectral analysis module placed in a path of the primary light beam; and a control system connected to the detector and to the spectral detection system. The control system is configured to determine a reference spectral profile of the primary light beam based on the detected characteristic; compare the reference spectral profile of the primary light beam with a sensed spectral profile of the primary light beam output from the spectral detection system; and based on this comparison, adjust a scale of the spectral detection system.
摘要:
An apparatus includes a material having an optical transition profile with a known energy transition; and a detector configured to detect a characteristic associated with the interaction between the material and the testing light beam. The testing light beam is either a primary light beam produced by an optical source or a calibration light beam. The apparatus also includes a spectral analysis module placed in a path of the primary light beam; and a control system connected to the detector and to the spectral detection system. The control system is configured to determine a reference spectral profile of the primary light beam based on the detected characteristic; compare the reference spectral profile of the primary light beam with a sensed spectral profile of the primary light beam output from the spectral detection system; and based on this comparison, adjust a scale of the spectral detection system.
摘要:
Online calibration of laser performance as a function of the repetition rate at which the laser is operated is disclosed. The calibration can be periodic and carried out during a scheduled during a non-exposure period. Various criteria can be used to automatically select the repetition rates that result in reliable in-spec performance. The reliable values of repetition rates are then made available to the scanner as allowed values and the laser/scanner system is then permitted to use those allowed repetition rates.
摘要:
Positional information of a movable body in a Y-axis direction is measured using an interferometer and an encoder whose short-term stability of measurement values excels when compared with the interferometer, and based on the measurement results, a predetermined calibration operation for obtaining correction information for correcting measurement values of the encoder is performed. Accordingly, by using measurement values of the interferometer, correction information for correcting the measurement values of the encoder whose short-term stability of the measurement values excels the interferometer is obtained. Then, based on the measurement values of the encoder and the correction information, the movable body is driven in the Y-axis direction with good precision.
摘要:
A positioning system for positioning an object in a lithographic apparatus, including: a first and second object tables moveable in an operating area; a first position measurement system to provide an incremental position measurement of the second object table relative to a reference when in the operating area, wherein the first position measurement system is configured to provide an absolute position measurement of the first object table relative to the reference; a second position measurement system to provide an absolute position measurement of the first object table relative to the second object table, and wherein the first position measurement system is further configured to provide an absolute position measurement of the second object table relative to the reference based on the absolute position measurement of the first object table relative to the reference and on the absolute position measurement of the first object table relative to the second object table.