公开(公告)号：US20230371384A1

公开(公告)日：2023-11-16

申请号：US18250742

申请日：2020-10-26

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Ling Li ,  Xuewen Shi ,  Nianduan Lu ,  Congyan Lu ,  Di Geng ,  Xinlv Duan ,  Ming Liu

IPC: H10N30/074 ,  G01L1/16 ,  H10N30/067

CPC classification number: H10N30/074 ,  G01L1/16 ,  H10N30/067

Abstract: A pressure sensor based on zinc oxide nanowires and a method of manufacturing a pressure sensor based on zinc oxide nanowires are provided. The manufacturing method includes: manufacturing a bottom electrode on a substrate; manufacturing a seed layer on the bottom electrode; manufacturing a zinc oxide nanowire layer on the seed layer; manufacturing a support layer on the zinc oxide nanowire layer; and manufacturing a top electrode on the support layer.