公开(公告)号：US11889765B2

公开(公告)日：2024-01-30

申请号：US17181432

申请日：2021-02-22

Applicant: STMicroelectronics S.r.l.

Inventor： Gianluca Longoni ,  Luca Seghizzi

IPC: B81B3/00 ,  H10N30/20 ,  H02N2/18 ,  H10N30/05 ,  H10N30/074 ,  H10N30/85 ,  H10N30/00

CPC classification number: H10N30/2042 ,  B81B3/0021 ,  H02N2/186 ,  H10N30/05 ,  H10N30/074 ,  H10N30/10513 ,  H10N30/85 ,  B81B2203/0118

Abstract: A MEMS device is provided that includes a semiconductor substrate including a main surface extending perpendicular to a first direction and a side surface extending on a plane parallel to the first direction and to a second direction that is perpendicular to the first direction. At least one cantilevered member protrudes from the side surface of the semiconductor substrate along a third direction that is perpendicular to the first and second directions. The at least one cantilevered member includes a body portion that includes a piezoelectric material. The body portion has a length along the third direction, a height along the first direction and a width along the second direction, and the height is greater than the width. The at least one cantilevered member is configured to vibrate by lateral bending along a direction perpendicular to the first direction.

公开(公告)号：US11882767B2

公开(公告)日：2024-01-23

申请号：US16976142

申请日：2019-02-27

Applicant: Novosound Ltd.

Inventor： David Hughes ,  Desmond Gibson ,  Daniel Irving

IPC: H10N30/074 ,  H10N30/082 ,  H10N30/87 ,  H10N30/853 ,  H10N30/00

CPC classification number: H10N30/074 ,  H10N30/082 ,  H10N30/10513 ,  H10N30/853 ,  H10N30/87

Abstract: A method for producing an ultrasonic transducer or ultrasonic transducer array, the method comprising providing or depositing a layer of piezoelectric material on a substrate. The piezoelectric material is a doped, co-deposited or alloyed piezoelectric material. The piezoelectric material comprises: a doped, co-deposited or alloyed metal oxide or metal nitride, the metal oxide or metal nitride being doped, co-deposited or alloyed with vanadium or a compound thereof; or zinc oxide doped, co-deposited or alloyed with a transition metal or a compound thereof. Optionally, the deposition of the layer of piezoelectric material is by sputter coating, e.g. using a sputtering target that comprises a doped or alloyed piezoelectric material. In examples, the layer of piezoelectric material is deposited onto the substrate using high power impulse magnetron sputtering (HIPIMS). Further enhancement may be obtained using substrate biasing (e.g. DC and/or RF) during deposition of the layer of piezoelectric material. In further examples, the substrate is provided on a rotating drum whilst tire layer of piezoelectric material is being deposited.

公开(公告)号：US20230371384A1

公开(公告)日：2023-11-16

申请号：US18250742

申请日：2020-10-26

Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES

Inventor： Ling Li ,  Xuewen Shi ,  Nianduan Lu ,  Congyan Lu ,  Di Geng ,  Xinlv Duan ,  Ming Liu

IPC: H10N30/074 ,  G01L1/16 ,  H10N30/067

CPC classification number: H10N30/074 ,  G01L1/16 ,  H10N30/067

Abstract: A pressure sensor based on zinc oxide nanowires and a method of manufacturing a pressure sensor based on zinc oxide nanowires are provided. The manufacturing method includes: manufacturing a bottom electrode on a substrate; manufacturing a seed layer on the bottom electrode; manufacturing a zinc oxide nanowire layer on the seed layer; manufacturing a support layer on the zinc oxide nanowire layer; and manufacturing a top electrode on the support layer.

公开(公告)号：US20230329120A1

公开(公告)日：2023-10-12

申请号：US17928608

申请日：2021-12-08

Applicant: CERACOMP CO., LTD.

Inventor： Ho Yong LEE ,  Won Sun BAICK ,  Moon Chan KIM ,  Hyun Taek OH ,  Hyun Jae JOO

IPC: H10N30/853 ,  H10N30/074 ,  H10N30/097

CPC classification number: H10N30/8548 ,  H10N30/074 ,  H10N30/097 ,  H10N30/8561

Abstract: Provided is a piezoelectric single crystal comprising an internal bias electric field, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that as a change in each composition of [A] site ions, [B] site ions and [O] site ions from a perovskite type crystal structure ( [A] [B] O3), and oxygen partial-pressure during heat treatment in terms of a manufacturing process are controlled, while maintaining the inherent high dielectric constant and piezoelectric constant, the high internal bias electric field (EI) characteristic essential for the electrical stability of the piezoelectric single crystal is simultaneously satisfied. Therefore, piezoelectric application components and dielectric application components using the piezoelectric single crystal having excellent characteristics can be used in a wide temperature range and operating voltage conditions.

公开(公告)号：US11706987B2

公开(公告)日：2023-07-18

申请号：US16722137

申请日：2019-12-20

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： You Qian ,  Joan Josep Giner De Haro ,  Rakesh Kumar

IPC: H01L41/314 ,  H10N30/072 ,  H10N30/074 ,  H10N30/85 ,  H10N30/87

CPC classification number: H10N30/072 ,  H10N30/074 ,  H10N30/85 ,  H10N30/87

Abstract: A semiconductor device may include: a substrate wafer, a bonding layer at least partially covering a front surface of the substrate wafer, a plurality of silicon pillars bonded to the front surface of the substrate wafer by the bonding layer, a single-crystal piezoelectric film having a first surface and an opposing second surface, a top electrode arranged adjacent to the first surface of the single-crystal piezoelectric film, and a bottom electrode arranged adjacent to the second surface of the single-crystal piezoelectric film. The single-crystal piezoelectric film may be supported by the plurality of silicon pillars such that the second surface of the piezoelectric film and the front surface of the substrate wafer enclose a cavity therebetween.

公开(公告)号：US12048207B2

公开(公告)日：2024-07-23

申请号：US18138866

申请日：2023-04-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L23/00 ,  B23K26/04 ,  B23K26/06 ,  B23K26/0622 ,  B23K26/08 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10K50/842 ,  H10K50/844 ,  H10K59/121 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K71/40 ,  H10K71/50 ,  H10K71/80 ,  H10K77/10 ,  H10K50/18 ,  H10K50/86 ,  H10K59/12 ,  H10K102/00 ,  H10N30/074

CPC classification number: H10K59/126 ,  B23K26/04 ,  B23K26/0617 ,  B23K26/0622 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/083 ,  H01L27/1225 ,  H01L27/1266 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H10K50/8426 ,  H10K50/844 ,  H10K59/1213 ,  H10K59/124 ,  H10K59/38 ,  H10K71/00 ,  H10K71/421 ,  H10K71/50 ,  H10K71/80 ,  H10K77/111 ,  H10K50/18 ,  H10K50/865 ,  H10K59/12 ,  H10K59/1201 ,  H10K2102/311 ,  H10K2102/351 ,  H10N30/074 ,  Y02E10/549 ,  Y02P70/50

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US20240223151A1

公开(公告)日：2024-07-04

申请号：US18402488

申请日：2024-01-02

Applicant: SiTime Coporation

Inventor： Joseph C. Doll ,  Paul M. Hagelin ,  Ginel C. Hill ,  Nicholas Miller ,  Charles I. Grosjean

IPC: H03H9/02 ,  H03H3/02 ,  H03H9/15 ,  H03H9/24 ,  H10N30/04 ,  H10N30/06 ,  H10N30/074 ,  H10N30/87

CPC classification number: H03H9/02448 ,  H03H9/02362 ,  H03H9/2452 ,  H10N30/04 ,  H10N30/06 ,  H10N30/074 ,  H10N30/878 ,  H03H2003/027 ,  H03H2009/02307 ,  H03H2009/155

Abstract: A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

公开(公告)号：US20240130240A1

公开(公告)日：2024-04-18

申请号：US18535923

申请日：2023-12-11

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Gianluca LONGONI ,  Luca SEGHIZZI

IPC: H10N30/20 ,  B81B3/00 ,  H02N2/18 ,  H10N30/00 ,  H10N30/05 ,  H10N30/074 ,  H10N30/85

CPC classification number: H10N30/2042 ,  B81B3/0021 ,  H02N2/186 ,  H10N30/05 ,  H10N30/074 ,  H10N30/10513 ,  H10N30/85 ,  B81B2203/0118

Abstract: A MEMS device is provided that includes a semiconductor substrate including a main surface extending perpendicular to a first direction and a side surface extending on a plane parallel to the first direction and to a second direction that is perpendicular to the first direction. At least one cantilevered member protrudes from the side surface of the semiconductor substrate along a third direction that is perpendicular to the first and second directions. The at least one cantilevered member includes a body portion that includes a piezoelectric material. The body portion has a length along the third direction, a height along the first direction and a width along the second direction, and the height is greater than the width. The at least one cantilevered member is configured to vibrate by lateral bending along a direction perpendicular to the first direction.

公开(公告)号：US20240098426A1

公开(公告)日：2024-03-21

申请号：US18370017

申请日：2023-09-19

Applicant: Skyworks Solutions, Inc.

Inventor： Siarhei Dmitrievich Barsukou

IPC: H04R17/02 ,  H10N30/067 ,  H10N30/074

CPC classification number: H04R17/02 ,  H10N30/067 ,  H10N30/074 ,  H04R2201/003 ,  H04R2499/11

Abstract: A piezoelectric microelectromechanical system microphone has a piezoelectric sensor layer with at least two sensing electrodes and at least one piezoelectric layer. Each piezoelectric layer can deform and generate an electrical potential responsive to impingement of sound waves on the piezoelectric layer. The sensing electrodes and the at least one piezoelectric layer form a stacked electrode structure. Each sensing electrode is disposed on or below a corresponding piezoelectric layer and senses the generated electrical potential. At least one of the sensing electrodes can include first corrugations which are configured such to release residual stress and to improve sensitivity of the microelectromechanical system microphone.

公开(公告)号：US11856862B2

公开(公告)日：2023-12-26

申请号：US17874446

申请日：2022-07-27

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chi-Yuan Shih ,  Shih-Fen Huang ,  You-Ru Lin ,  Yan-Jie Liao

IPC: H10N39/00 ,  H10N30/074 ,  H10N30/20

CPC classification number: H10N39/00 ,  H10N30/074 ,  H10N30/206

Abstract: In some embodiments, the present disclosure relates to a method in which a first set of one or more voltage pulses is applied to a piezoelectric device over a first time period. During the first time period, the method determines whether a performance parameter of the piezoelectric device has a first value that deviates from a reference value by more than a predetermined value. Based on whether the first value deviates from the reference value by more than the predetermined value, the method selectively applies a second set of one or more voltage pulses to the piezoelectric device over a second time period. The second time period is after the first time period and the second set of one or more voltage pulses differs in magnitude and/or polarity from the first set of one or more voltage pulses.