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1.发明公开公开(公告)号：US20230371384A1
公开(公告)日：2023-11-16
申请号：US18250742
申请日：2020-10-26
Inventor： Ling Li , Xuewen Shi , Nianduan Lu , Congyan Lu , Di Geng , Xinlv Duan , Ming Liu
IPC: H10N30/074 , G01L1/16 , H10N30/067
CPC classification number: H10N30/074 , G01L1/16 , H10N30/067
Abstract: A pressure sensor based on zinc oxide nanowires and a method of manufacturing a pressure sensor based on zinc oxide nanowires are provided. The manufacturing method includes: manufacturing a bottom electrode on a substrate; manufacturing a seed layer on the bottom electrode; manufacturing a zinc oxide nanowire layer on the seed layer; manufacturing a support layer on the zinc oxide nanowire layer; and manufacturing a top electrode on the support layer.
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公开(公告)号：US11215652B2
公开(公告)日：2022-01-04
申请号：US16065582
申请日：2015-12-25
Inventor： Guangwei Xu , Zhiheng Han , Wei Wang , Congyan Lu , Lingfei Wang , Ling Li , Ming Liu
Abstract: A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes. The invention has the advantages of reasonable theory, accurate result, simple and easy operation, and is favorable for optimizing the device performance and establishing a complete electrical model of the device.
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