公开(公告)号：US20170263721A1

公开(公告)日：2017-09-14

申请号：US15607982

申请日：2017-05-30

Applicant: INTEL CORPORATION

Inventor： KELIN J. KUHN ,  KAIZAD MISTRY ,  MARK BOHR ,  CHRIS AUTH

IPC: H01L29/417 ,  H01L21/768 ,  H01L29/66 ,  H01L29/45 ,  H01L29/78

CPC classification number: H01L29/41725 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76874 ,  H01L23/485 ,  H01L23/5226 ,  H01L29/456 ,  H01L29/66477 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of fabricating a first contact to a semiconductor device, which fundamentally comprises providing a semiconductor device formed on a substrate. The substrate further includes a conductive surface. A dielectric layer is formed over the substrate and has an opening exposing the conductive surface. The opening extends an entire length of the semiconductor device, partway down the entire length of the device, extending from the device onto adjacent field of the device, or and a combination thereof. A barrier layer is formed within the opening. A copper containing material fills the opening to form a first contact to the semiconductor device.